Datasheet
Table Of Contents
- FEATURES
- APPLICATIONS
- GENERAL DESCRIPTION
- PIN CONFIGURATIONS
- TABLE OF CONTENTS
- REVISION HISTORY
- SPECIFICATIONS
- ABSOLUTE MAXIMUM RATINGS
- TYPICAL PERFORMANCE CHARACTERISTICS
- FUNCTIONAL DESCRIPTION
- AMPLIFIER ARCHITECTURE
- BASIC AUTO-ZERO AMPLIFIER THEORY
- HIGH GAIN, CMRR, PSRR
- MAXIMIZING PERFORMANCE THROUGHPROPER LAYOUT
- 1/f NOISE CHARACTERISTICS
- INTERMODULATION DISTORTION
- BROADBAND AND EXTERNAL RESISTOR NOISE CONSIDERATIONS
- OUTPUT OVERDRIVE RECOVERY
- INPUT OVERVOLTAGE PROTECTION
- OUTPUT PHASE REVERSAL
- CAPACITIVE LOAD DRIVE
- POWER-UP BEHAVIOR
- APPLICATIONS INFORMATION
- OUTLINE DIMENSIONS
Data Sheet AD8551/AD8552/AD8554
Rev. F | Page 9 of 24
5µs
V
SY
= ±1.35V
C
L
= 50pF
R
L
=
∞
A
V
= 1
50mV
01101-025
Figure 25. Small Signal Transient Response at 2.7 V
5µs
V
SY
= ±2.5V
C
L
= 50pF
R
L
=
∞
A
V
= 1
50mV
01101-026
Figure 26. Small Signal Transient Response at 5 V
CAPACITANCE (pF)
SMALL SIGNAL OVERSHOOT (%)
50
45
0
40
35
30
25
20
15
10
5
+OS
–OS
10
100 1k 10k
V
SY
= ±1.35V
R
L
= 2kΩ
T
A
= 25°C
01101-027
Figure 27. Small Signal Overshoot vs. Load Capacitance at 2.7 V
CAPACITANCE (pF)
SMALL SIGNAL OVERSHOOT (%)
45
0
40
35
30
25
20
15
10
5
10 100 1k 10k
V
SY
= ±2.5V
R
L
= 2kΩ
T
A
= 25°C
–OS
+OS
01101-028
Figure 28. Small Signal Overshoot vs. Load Capacitance at 5 V
20µs
V
SY
= ±2.5V
V
IN
= –200mV p-p
(RET TO GND)
C
L
= 0pF
R
L
= 10kΩ
A
V
= –100
1V
BOTTOM SCALE: 1V/DIV
TOP SCALE: 200mV/DIV
0V
V
IN
V
OUT
0V
01101-029
Figure 29. Positive Overvoltage Recovery
20µs
V
SY
= ±2.5V
V
IN
= 200mV p-p
(RET TO GND)
C
L
= 0pF
R
L
= 10kΩ
A
V
= –100
1V
BOTTOM SCALE: 1V/DIV
TOP SCALE: 200mV/DIV
0V
V
IN
V
OUT
0V
01101-030
Figure 30. Negative Overvoltage Recovery










