Datasheet

AD8531/AD8532/AD8534
Rev. F | Page 3 of 20
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 3.0 V, V
CM
= 1.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
25 mV
−40°C ≤ T
A
≤ +85°C 30 mV
Input Bias Current I
B
5 50 pA
−40°C ≤ T
A
≤ +85°C 60 pA
Input Offset Current I
OS
1 25 pA
−40°C ≤ T
A
≤ +85°C 30 pA
Input Voltage Range 0 3 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 3 V 38 45 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, V
O
= 0.5 V to 2.5 V 25 V/mV
Offset Voltage Drift ΔV
OS
/ΔT 20 μV/°C
Bias Current Drift ΔI
B
/ΔT 50 fA/°C
Offset Current Drift ΔI
OS
/ΔT 20 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
I
L
= 10 mA 2.85 2.92 V
−40°C ≤ T
A
≤ +85°C 2.8 V
Output Voltage Low V
OL
I
L
= 10 mA 60 100 mV
−40°C ≤ T
A
≤ +85°C 125 mV
Output Current I
OUT
±250 mA
Closed-Loop Output Impedance Z
OUT
f = 1 MHz, A
V
= 1 60 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 3 V to 6 V 45 55 dB
Supply Current/Amplifier I
SY
V
O
= 0 V 0.70 1 mA
−40°C ≤ T
A
≤ +85°C 1.25 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 kΩ 3.5 V/μs
Settling Time t
S
To 0.01% 1.6 μs
Gain Bandwidth Product GBP 2.2 MHz
Phase Margin фo 70 Degrees
Channel Separation CS f = 1 kHz, R
L
= 2 kΩ 65 dB
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 45 nV/√Hz
f = 10 kHz 30 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.05 pA/√Hz