Datasheet

Data Sheet AD8432
Rev. C | Page 5 of 32
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Voltage
Supply Voltage 5.5 V
Input Voltage 0 V to VPS
Power Dissipation 120 mW
Temperature
Operating Temperature –40°C to +85°C
Storage Temperature –65°C to +150°C
Package Glass Transition Temperature (T
G
)
150°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages. The θ
JA
value in Table 3 assumes a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance
1
Parameter θ
JA
θ
JC
θ
JB
Ψ
JT
Unit
40-Lead LFCSP 57.9 11.2 35.9 1.1 °C/W
1
4-layer JEDEC board (2S2P).
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8432 is limited
by the associated rise in junction temperature (T
J
) on the die. At
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 150°C for an
extended period can cause changes in silicon devices, potentially
resulting in a loss of functionality.
ESD CAUTION