Datasheet

AD8400/AD8402/AD8403
Rev. E | Page 8 of 32
ELECTRICAL CHARACTERISTICS—1 KΩ VERSION
V
DD
= 3 V ± 10% or 5 V ± 10%, V
A
= V
DD
, V
B
= 0 V, −40°C ≤ T
A
≤ +125°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ
1
Max Unit
DC CHARACTERISTICS RHEOSTAT MODE (Specifications Apply to All VRs)
Resistor Differential NL
2
R-DNL R
WB
, V
A
= no connect −5 −1 +3 LSB
Resistor Nonlinearity
2
R-INL R
WB
, V
A
= no connect −4 ±1.5 +4 LSB
Nominal Resistance
3
R
AB
T
A
= 25°C, model: AD840XYY1 0.8 1.2 1.6 kΩ
Resistance Tempco ∆R
AB
/∆T V
AB
= V
DD
, wiper = no connect 700 ppm/°C
Wiper Resistance R
W
V
DD
= 5V, I
W
= V
DD
/R
AB
53 100 Ω
R
W
V
DD
= 3V, I
W
= V
DD
/R
AB
200 Ω
Nominal Resistance Match ∆R/R
AB
CH 1 to CH 2, V
AB
= V
DD
, T
A
= 25°C 0.75 2 %
DC CHARACTERISTICS POTENTIOMETER DIVIDER (Specifications Apply to All VRs)
Resolution N 8 Bits
Integral Nonlinearity
4
INL −6 ±2 +6 LSB
Differential Nonlinearity
4
DNL V
DD
= 5 V −4 −1.5 +2 LSB
DNL V
DD
= 3 V, T
A
= 25°C −5 −2 +5 LSB
Voltage Divider Temperature Coefficient ∆V
W
/∆T Code = 80H 25 ppm/°C
Full-Scale Error V
WFSE
Code = FF
H
−20 −12 0 LSB
Zero-Scale Error V
WZSE
Code = 00
H
0 6 10 LSB
RESISTOR TERMINALS
Voltage Range
5
V
A
, V
B
, V
W
0 V
DD
V
Capacitance
6
Ax, Bx C
A
, C
B
f = 1 MHz, measured to GND, code = 80
H
75 pF
Capacitance
6
Wx C
W
f = 1 MHz, measured to GND, code = 80
H
120 pF
Shutdown Supply Current
7
I
A_SD
V
A
= V
DD
, V
B
= 0 V,
SHDN
= 0
0.01 5 µA
Shutdown Wiper Resistance R
W_SD
V
A
= V
DD
, V
B
= 0 V,
SHDN
= 0, V
DD
= 5 V
50 100 Ω
DIGITAL INPUTS AND OUTPUTS
Input Logic High V
IH
V
DD
= 5 V 2.4 V
Input Logic Low V
IL
V
DD
= 5 V 0.8 V
Input Logic High V
IH
V
DD
= 3 V 2.1 V
Input Logic Low V
IL
V
DD
= 3 V 0.6 V
Output Logic High V
OH
R
L
= 2.2 kΩ to V
DD
V
DD
− 0.1 V
Output Logic Low V
OL
I
OL
= 1.6 mA, V
DD
= 5 V 0.4 V
Input Current I
IL
V
IN
= 0 V or 5 V, V
DD
= 5 V ±1 µA
Input Capacitance
6
C
IL
5 pF
POWER SUPPLIES
Power Supply Range V
DD
range 2.7 5.5 V
Supply Current (CMOS) I
DD
V
IH
= V
DD
or V
IL
= 0 V 0.01 5 µA
Supply Current (TTL)
8
I
DD
V
IH
= 2.4 V or 0.8 V, V
DD
= 5.5 V 0.9 4 mA
Power Dissipation (CMOS)
9
P
DISS
V
IH
= V
DD
or V
IL
= 0 V, V
DD
= 5.5 V 27.5 µW
Power Supply Sensitivity PSS ∆V
DD
= 5 V ± 10% 0.0035 0.008 %/%
PSS ∆V
DD
= 3 V ± 10% 0.05 0.13 %/%