Datasheet

AD825
Rev. F | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage ±18 V
Internal Power Dissipation
1
Small Outline (R) See Figure 6
Input Voltage (Common Mode) ±V
S
Differential Input Voltage ±V
S
Output Short-Circuit Duration See Figure 6
Storage Temperature Range (R, R-16) −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
Specification is for device in free air:
8-lead SOIC package: θ
JA
= 155°C/W
16-lead SOIC package: θ
JA
= 85°C/W
PIN CONFIGURATIONS
NC = NO CONNECT
AD825
TOP VIEW
(Not to Scale)
NC
1
–IN 2
+IN
3
–
V
S
4
NC 8
+V
S
7
OUTPUT
6
NC 5
00876-E-001
Figure 4. 8-Lead SOIC
NC
1
NC 2
NC 3
–INPUT 4
+INPUT 5
–V
S
6
NC
7
NC
8
NC
10
NC
16
NC 15
NC 14
+V
S
13
OUTPUT 12
NC
11
NC
9
AD825
TOP VIEW
(Not to Scale)
NC = NO CONNECT 00876-E-002
Figure 5. 16-Lead SOIC
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
–50 90–40–30–20–100 102030 5060708040
1.0
0.5
8-LEAD SOIC PACKAGE
T
J
= 150°C
MAXIMUM POWER DISSIPATION (W)
2.5
16-LEAD SOIC PACKAGE
00876-E-004
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.