Datasheet

AD823
Rev. A | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 36 V
Internal Power Dissipation
1
PDIP (N) 1.3 W
SOIC (R) 0.9 W
Input Voltage (Common Mode) ±V
S
Differential Input Voltage ±1.2 V
Output Short-Circuit Duration See Figure 4
Storage Temperature Range N, R −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tion of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
Specification is for device in free air:
8-Lead PDIP: θ
JA
= 90°C/W
8-Lead SOIC: θ
JA
= 160°C/W
MAXIMUM POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
–50 90–40–30–20–100 102030 5060708040
1.0
0.5
8-LEAD PDIP
8-LEAD SOIC
T
J
= 150°C
00901-A-004
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.