Datasheet

AD8229 Data Sheet
Rev. B | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage ±17 V
Output Short-Circuit Current Duration Indefinite
Maximum Voltage at IN, +IN
1
±V
S
Differential Input Voltage
1
Gain 4 ±V
S
4 > Gain > 50 ±50 V/gain
Gain 50 ±1 V
±V
S
Storage Temperature Range 65°C to +150°C
Specified Temperature Range
SBDIP 40°C to +210°C
SOIC −40°C to +175°C
SBDIP 245°C
SOIC 200°C
ESD
Human Body Model 4 kV
Charge Device Model 1.5 kV
Machine Model 200 V
1
For voltages beyond these limits, use input protection resistors. See the
Theory of Operation section for more information.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
PREDICTED LIFETIME VS. OPERATING
TEMPERATURE
Comprehensive reliability testing is performed on the AD8229.
Product lifetimes at extended operating temperature are obtained
using high temperature operating life (HTOL). Lifetimes are
predicted from the Arrhenius equation, taking into account
potential design and manufacturing failure mechanism assump-
tions. HTOL is performed to JEDEC JESD22-A108. A minimum
of three wafer fab and assembly lots are processed through
HTOL at the maximum operating temperature. Comprehensive
reliability testing is performed on all Analog Devices, Inc., high
temperature (HT) products.
1
100k
10k
1k
100
10
120 210200190180170160150140130
PREDICTED LIFETIME (Hours)
OPERATING TEMPERATURE (°C)
09412-200
Figure 3. Predicted Lifetime vs. Operating Temperature
Refer to the AD8229 Predicted Lifetime vs. Operating Temperature
document for the most up-to-date reliability data.
THERMAL RESISTANCE
θ
JA
is specified for a device in free air using a 4-layer JEDEC
printed circuit board (PCB).
Table 3.
Package Type θ
JA
Unit
8-Lead SBDIP 100 °C/W
8-Lead SOIC 121 °C/W
ESD CAUTION