Datasheet

AD8229 Data Sheet
Rev. B | Page 4 of 24
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC RESPONSE
Small Signal Bandwidth –3 dB
G = 1 15 MHz
G = 10 4 MHz
G = 100
1.2
MHz
G = 1000 0.15 MHz
Settling Time 0.01% 10 V step
G = 1 0.75 µs
G = 10 0.65 µs
G = 100 0.85 µs
G = 1000 5 µs
Settling Time 0.001% 10 V step
G = 1 0.9 µs
G = 10 0.9 µs
G = 100 1.2 µs
G = 1000 7 µs
Slew Rate
G = 1 to 100 22 V/µs
THD (FIRST FIVE HARMONICS)
f = 1 kHz, R
L
= 2 kΩ, V
OUT
= 10 V p-p
G = 1 –130 dBc
G = 10 –116 dBc
G = 100 –113 dBc
G = 1000 –111 dBc
THD + Noise f = 1 kHz, R
L
= 2 kΩ, V
OUT
= 10 V p-p, G = 100 0.0005 %
GAIN
2
G = 1 + (6 kΩ/R
G
)
Gain Range 1 1000 V/V
Gain Error V
OUT
= ±10 V
G = 1 0.01 0.03 %
G = 10 0.05 0.3 %
G = 100 0.05 0.3 %
G = 1000 0.1 0.3 %
Gain Nonlinearity V
OUT
= −10 V to +10 V
G = 1 to 1000 R
L
= 10 kΩ 2 ppm
Gain vs. Temperature
G = 1 T
A
= −40°C to +210°C 2 5 ppm/°C
G > 10 T
A
= −40°C to +210°C −100 ppm/°C
INPUT
Impedance (Pin to Ground)
3
1.5||3 GΩ||pF
Input Operating Voltage Range
4
V
S
= ±5 V to ±18 V for dual supplies
−V
S
+ 2.8
+V
S
− 2.5
V
Over Temperature T
A
= −40°C to +210°C −V
S
+ 2.8 +V
S
− 2.5 V
OUTPUT
Output Swing, R
L
= 2 kΩ −V
S
+ 1.9 +V
S
− 1.5 V
High Temperature, SBDIP package T
A
= 210°C −V
S
+ 1.1 +V
S
− 1.1 V
High Temperature, SOIC package T
A
= 175°C −V
S
+ 1.2 +V
S
− 1.1 V
Output Swing, R
L
= 10 kΩ −V
S
+ 1.8 +V
S
− 1.2 V
High Temperature, SBDIP package T
A
= 210°C −V
S
+ 1.1 +V
S
− 1.1 V
High Temperature, SOIC package T
A
= 175°C −V
S
+ 1.2 +V
S
− 1.1 V
Short-Circuit Current 35 mA