Datasheet

AD8221
Rev. C | Page 22 of 24
DIE INFORMATION
Die size: 1575 μm × 2230 μm
Die thickness: 381 μm
To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, R
G
, by connecting
Pad 2A and Pad 2B in parallel to one end of R
G
and Pad 3A and Pad 3B in parallel to the other end of R
G
. For unity gain applications
where R
G
is not required, Pad 2A and Pad 2B must be bonded together as well as the Pad 3A and Pad 3B.
03149-104
1
2A
2B
3A
3B
4
5
6
8
7
LOGO
Figure 53. Bond Pad Diagram
Table 7. Bond Pad Information
Pad No. Mnemonic
Pad Coordinates
1
X (μm) Y (μm)
1 −IN –379 +951
2A R
G
–446 +826
2B R
G
–615 +474
3A R
G
–619 +211
3B R
G
–490 –190
4 +IN –621 –622
5 −V
S
+635 –823
6 REF +649 –339
7 V
OUT
+612 +84
8 +V
S
+636 +570
1
The pad coordinates indicate the center of each pad, referenced to the center of the die. The die orientation is indicated by the logo, as shown in Figure 53.