Datasheet

AD8197B
Rev. 0 | Page 5 of 28
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
AVCC to AVEE 3.7 V
DVCC to DVEE 3.7 V
DVEE to AVEE ±0.3 V
VTTI AVCC + 0.6 V
VTTO AVCC + 0.6 V
AMUXVCC 5.5 V
Internal Power Dissipation 2.2 W
High Speed Input Voltage
AVCC − 1.4 V < V
IN
<
AVCC + 0.6 V
High Speed Differential Input Voltage 2.0 V
Low Speed Input Voltage
DVEE − 0.3 V < V
IN
<
AMUXVCC + 0.6 V
I
2
C and Parallel Logic Input Voltage
DVEE − 0.3 V < V
IN
<
DVCC + 0.6 V
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions: a device soldered
in a 4-layer JEDEC circuit board for surface-mount packages.
θ
JC
is specified for no airflow.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
100-Lead LQFP 56 19 °C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8197B
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure. To ensure proper operation, it
is necessary to observe the maximum power rating as determined
by the coefficients in
Table 3 .
ESD CAUTION