Datasheet

AD8156
Rev. 0 | Page 3 of 20
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
V
TTI
= V
TTO
= V
CC
= 3.3 V, V
EE
= 0 V, R
L
= 50 Ω, differential output swing = 800 mV, ac-coupled, data rate = 6.25 Gbps, PRBS 2
23
−1,
V
IN
= 1 V p-p differential, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Maximum Data Rate NRZ data 6.25 Gbps
Deterministic Jitter Data date < 6.25 Gbps 25 ps p-p
Random Jitter 0.8 ps rms
Propagation Delay t
PD
Input to output 1000 ps
Propagation Delay Match 50 ps
Output Fall Time t
F
Differential, 20% to 80% 75 ps
Output Rise Time t
R
Differential, 20% to 80% 75 ps
INPUT CHARACTERISTICS
Input Voltage Swing V
IN
Differential 200 2000 mV p-p
Input Voltage Range Single-ended V
EE
+ 1.5 V
CC
V
Input Voltage Range V
CM
Common-mode V
EE
+ 1.6 V
CC
V
Input Termination R
IN
Single-ended 50 Ω
OUTPUT CHARACTERISTICS
Output Voltage Swing V
OUT
Differential, programmable 50 800 1850 mV p-p
Output Voltage Range Common-mode V
EE
+ 1.6 V
CC
V
Output Termination R
OUT
Single-ended 50 Ω
POWER SUPPLY
V
CC
Operating Range V
CC
V
EE
= 0 V 3.0 3.3 3.6 V
Supply Current I
CC
1
All disabled 19 mA
I
CC
1
All outputs on, no equalization 67 mA
I
CC
1
All outputs and equalizers on 141 mA
I
TTI
800 mV differential swing 32 mA
I
TTO
800 mV differential swing 32 mA
Power Dissipation
2
All disabled 60 mW
All outputs on, no equalization 400 mW
All outputs and equalizers on 700 mW
THERMAL CHARACTERISTICS
Operating Temperature Range −40 85 °C
LOGIC INPUT CHARACTERISTICS V
CC
= 3.3 V dc
Input V
IN
High 2.0 V
CC
V
Input V
IN
Low 0 0.8 V
1
I
CC
supply current excludes input and output termination currents. Currents at V
TTI
and V
TTO
count in power dissipation, but are not included in I
CC
. Note that in a CML
output structure with separate termination supplies, all of the output and input current is drawn from V
TTI
and the termination resistors, not from Vcc.
2
Power dissipation includes power due to 800 mV p-p differential input and output voltages; this is the true representation of power dissipated on and used by the
chip at an 800 mV p-p differential signal level.