Datasheet
REV. 0
–3–
AD8129/AD8130
(AD8129 G = 10, AD8130 G = 1, T
A
= 25C, V
S
= 12 V, REF = 0 V, PD ≥ V
IH
, R
L
= 1 k, C
L
= 2 pF,
unless otherwise noted. T
MIN
to T
MAX
= –40C to +85C, unless otherwise noted.)
12 V SPECIFICATIONS
Model AD8129A AD8130A
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth V
OUT
≤ 0.3 V p-p 175 200 250 290 MHz
V
OUT
= 2 V p-p 170 195 150 175 MHz
Bandwidth for 0.1 dB Flatness V
OUT
≤ 0.3 V p-p, SOIC/µSOIC 50/70 110 MHz
Slew Rate V
OUT
= 2 V p-p, 25% to 75% 935 1070 960 1100 V/µs
Settling Time V
OUT
= 2 V p-p, 0.1% 20 20 ns
Rise and Fall Time V
OUT
≤ 1 V p-p, 10% to 90% 1.7 1.4 ns
Output Overdrive Recovery 40 40 ns
NOISE/DISTORTION
Second Harmonic/Third Harmonic V
OUT
= 1 V p-p, 5 MHz –71/–84 –79/–86 dBc
V
OUT
= 2 V p-p, 5 MHz –65/–74 –74/–81 dBc
V
OUT
= 1 V p-p, 10 MHz –65/–82 –74/–80 dBc
V
OUT
= 2 V p-p, 10 MHz –59/–70 –74/–74 dBc
IMD V
OUT
= 2 V p-p, 10 MHz –67 –70 dBc
Output IP3 V
OUT
= 2 V p-p, 10 MHz 25 26 dBm
Input Voltage Noise (RTI) f ≥ 10 kHz 4.6 13 nV/√Hz
Input Current Noise (+IN, –IN) f ≥ 100 kHz 1 1 pA/√Hz
Input Current Noise (REF, FB) f ≥ 100 kHz 1.4 1.4 pA/√Hz
Differential Gain Error AD8130, G = 2, NTSC 200 IRE, R
L
≥ 150 Ω 0.3 0.13 %
Differential Phase Error AD8130, G = 2, NTSC 200 IRE, R
L
≥ 150 Ω 0.1 0.2 Degrees
INPUT CHARACTERISTICS
Common-Mode Rejection Ratio DC to 100 kHz, V
CM
= ±10 V 92 105 88 105 dB
V
CM
= 1 V p-p @ 2 MHz 80 80 dB
V
CM
= 1 V p-p @ 10 MHz 70 70 dB
CMRR with V
OUT
= 1 V p-p V
CM
= 4 V p-p @ 1 kHz, V
OUT
= ±0.5 V dc 93 80 dB
Common-Mode Voltage Range V
+IN
– V
–IN
= 0 V ±10.3 ±10.5 V
Differential Operating Range ±0.5 ± 2.5 V
Differential Clipping Level ±0.6 ± 0.75 ±0.85 ±2.3 ± 2.8 ± 3.3 V
Resistance Differential 1 6 MΩ
Common-Mode 4 4 MΩ
Capacitance Differential 3 3 pF
Common-Mode 4 4 pF
DC PERFORMANCE
Closed-Loop Gain Error V
OUT
= ± 1 V, R
L
≥ 150 Ω±0.8 ±1.8 ± 0.15 ± 0.6 %
T
MIN
to T
MAX
20 10 ppm/°C
Open-Loop Gain V
OUT
= ± 1 V 87 73 dB
Gain Nonlinearity V
OUT
= ± 1 V 250 200 ppm
Input Offset Voltage 0.2 0.8 0.4 1.8 mV
T
MIN
to T
MAX
210µV/°C
T
MIN
to T
MAX
1.4 3.5 mV
Input Offset Voltage vs. Supply +V
S
= +12 V, –V
S
= –11.0 V to –13.0 V –88 –82 –77 –70 dB
–V
S
= –12 V, +V
S
= +11.0 V to +13.0 V –92 –84 –88 –70 dB
Input Bias Current (+IN, –IN) ±0.25 ±2 ± 0.25 ± 2 µA
Input Bias Current (REF, FB) ±0.5 ± 3.5 ± 0.5 ± 3.5 µA
T
MIN
to T
MAX
(+IN, –IN, REF, FB) 2.5 2.5 nA/°C
Input Offset Current (+IN, –IN, REF, FB) ±0.08 ±0.4 ± 0.08 ± 0.4 µA
T
MIN
to T
MAX
0.2 0.2 nA/°C
OUTPUT PERFORMANCE
Voltage Swing R
LOAD
= 700 Ω±10.8 ±10.8 V
Output Current 40 40 mA
Short Circuit Current To Common –60/+55 –60/+55 mA
T
MIN
to T
MAX
–240 –240 µA/°C
Output Impedance PD ≤ V
IL
, In Power-Down Mode 10 10 pF
POWER SUPPLY
Operating Voltage Range Total Supply Voltage ±2.25 ±12.6 ±2.25 ±12.6 V
Quiescent Supply Current 13 13.9 13 13.9 mA
T
MIN
to T
MAX
43 43 µA/°C
PD ≤ V
IL
0.73 0.9 0.73 0.9 mA
PD ≤ V
IL
,
T
MIN
to T
MAX
1.1 1.1 mA
PD PIN
V
IH
+V
S
– 1.5 +V
S
– 1.5 V
V
IL
+V
S
– 2.5 +V
S
– 2.5 V
I
IH
PD = Min V
IH
–30 –30 µA
I
IL
PD = Max V
IL
–50 –50 µA
Input Resistance PD ≤ +V
S
– 3 V 3 3 kΩ
PD ≥ +V
S
– 2 V 100 100 kΩ
Enable Time 0.5 0.5 µs
Specifications subject to change without notice.