Datasheet

AD811
Rev. E | Page 4 of 20
SPECIFICATIONS
@ T
A
= +25°C, V
S
= ±15 V dc, R
LOAD
= 150 Ω, unless otherwise noted.
Table 1.
AD811J/A
1
AD811S
2
Parameter Conditions V
S
Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Small Signal Bandwidth (No Peaking)
−3 dB
G = +1 R
FB
= 562 Ω ±15 V 140 140 MHz
G = +2 R
FB
= 649 Ω ±15 V 120 120 MHz
G = +2 R
FB
= 562 Ω ±15 V 80 80 MHz
G = +10 R
FB
= 511 Ω ±15 V 100 100 MHz
0.1 dB Flat
G = +2 R
FB
= 562 Ω ±15 25 25 MHz
R
FB
= 649 Ω ±15 35 35 MHz
Full Power Bandwidth
3
V
OUT
= 20 V p-p ±15 40 40 MHz
Slew Rate V
OUT
= 4 V p-p ±15 400 400 V/µs
V
OUT
= 20 V p-p ±15 2500 2500 V/µs
Settling Time to 0.1% 10 V Step, A
V
= − 1 ±15 50 50 ns
Settling Time to 0.01% 10 V Step, A
V
= − 1 ±15 65 65 ns
Settling Time to 0.1% 2 V Step, A
V
= − 1 ±15 25 25 ns
Rise Time, Fall Time R
FB
= 649, A
V
= +2 ±15 3.5 3.5 ns
Differential Gain f = 3.58 MHz ±15 0.01 0.01 %
Differential Phase f = 3.58 MHz ±15 0.01 0.01 Degree
THD @ f
C
= 10 MHz V
OUT
= 2 V p-p, A
V
= +2 ±15 −74 −74 dBc
Third-Order Intercept
4
@ f
C
= 10 MHz ±15 36 36 dBm
±15 43 43 dBm
INPUT OFFSET VOLTAGE ±5 V, ±15 V 0.5 3 0.5 3 mV
T
MIN
to T
MAX
5 5 mV
Offset Voltage Drift 5 5 µV/°C
INPUT BIAS CURRENT
−Input ±5 V, ±15 V 2 5 2 5 µA
T
MIN
to T
MAX
15 30 µA
+Input ±5 V, ±1 5 V 2 10 2 10 µA
T
MIN
to T
MAX
20 25 µA
TRANSRESISTANCE T
MIN
to T
MAX
V
OUT
= ±10 V
R
L
= ∞ ±15 V 0.75 1.5 0.75 1.5 MΩ
R
L
= 200 Ω ±15 V 0.5 0.75 0.5 0.75 MΩ
V
OUT
= ±2.5 V
R
L
= 150 Ω ±5 V 0.25 0.4 0.125 0.4 MΩ
1
The AD811JR is specified with ±5 V power supplies only, with operation up to ±12 V.
2
See the Analog Devices military data sheet for 883B tested specifications.
3
FPBW = slew rate/(2 π V
PEAK
).
4
Output power level, tested at a closed-loop gain of two.