Datasheet

AD8112
Rev. 0 | Page 3 of 28
SPECIFICATIONS
T
A
= 25°C, V
S
= ±12 V, R
L
= 600 Ω, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth V
OUT
= 200 mV p-p, R
L
= 600 Ω, V
S
= ±12 V 46 60 MHz
V
OUT
= 200 mV p-p, R
L
= 150 Ω, V
S
= ±5 V 41 60 MHz
V
OUT
= 8 V p-p, R
L
= 600 Ω, V
S
= ±12 V 10 MHz
V
OUT
= 2 V p-p, R
L
= 150 Ω, V
S
= ±5 V 25 MHz
Gain Flatness 0.1 dB, V
OUT
= 200 mV p-p, R
L
= 150 Ω, V
S
= ±5 V 10 MHz
Propagation Delay V
OUT
= 2 V p-p, R
L
= 150 Ω 20 ns
Settling Time 0.1%, 2 V Step, R
L
= 150 Ω, V
S
= ±5 V 23 ns
Slew Rate 2 V step, R
L
= 150 Ω, V
S
= ±5 V 100 V/μs
20 V step, R
L
= 600 Ω, V
S
= ±12 V 120 V/μs
NOISE/DISTORTION PERFORMANCE
Differential Gain Error NTSC, R
L
= 1 kΩ, V
S
= ±5 V 0.1 %
Differential Phase Error NTSC, R
L
= 1 kΩ, V
S
= ±5 V 0.1 Degrees
Total Harmonic Distortion 20 kHz, R
L
= 600 Ω, 20 V p-p 0.002 %
Crosstalk, All Hostile f = 5 MHz, R
L
= 150 Ω, V
S
= ±5 V −67 dB
f = 20 kHz −83 dB
Off Isolation f = 5 MHz, R
L
= 150 Ω, V
S
= ±5 V, one channel −100 dB
f = 20 kHz, one channel −83 dB
Input Voltage Noise 20 kHz 14 nV/√Hz
0.1 MHz to 10 MHz 12 nV/√Hz
DC PERFORMANCE
Gain Error No load, V
S
= ±12 V, V
OUT
= ±8 V 0.3 2.5 %
R
L
= 600 Ω, V
S
= ±12 V 0.5 %
R
L
= 150 Ω, V
S
= ±5 V 0.5 %
Gain Matching No load, channel-to-channel 0.7 3.5 %
R
L
= 600 Ω, channel-to-channel 0.7 %
R
L
= 150 Ω, channel-to-channel 0.7 %
Gain Temperature Coefficient 20 ppm/°C
OUTPUT CHARACTERISTICS
Output Resistance Enabled 0.3 Ω
Disabled 3.4 4
Output Capacitance Disabled 5 pF
Output Voltage Swing V
S
= ±5 V, no load ±3.2 ±3.5 V
V
S
= ±12 V, no load ±10.3 ±10.5 V
I
OUT
= 20 mA, V
S
= ±5 V ±2.7 ±3 V
I
OUT
= 20 mA, V
S
= ±12 V ±9.8 ±10 V
Short-Circuit Current R
L
= 0 Ω 55 mA
INPUT CHARACTERISTICS
Input Offset Voltage All configurations ±4.5 ±8.5 mV
Temperature coefficient 10 μV/°C
Input Voltage Range No load, V
S
= ±5 V ±1.5 V
V
S
= ±12 V ±5.0 V
Input Capacitance Any switch configuration 4 pF
Input Resistance 50 MΩ
Input Bias Current Any number of enabled inputs +1 ±1.6 μA