Datasheet

AD8104/AD8105
Rev. 0 | Page 7 of 36
ABSOLUTE MAXIMUM RATINGS
Table 6.
Parameter Rating
Analog Supply Voltage
(VPOS – VNEG)
6 V
Digital Supply Voltage
(VDD – DGND)
6 V
Ground Potential Difference
(VNEG – DGND)
+0.5 V to −2.5 V
Maximum Potential Difference
(VDD – VNEG)
8 V
Common-Mode Analog Input
Voltage
VNEG to VPOS
Differential Analog Input Voltage ±2 V
Digital Input Voltage VDD
Output Voltage
(Disabled Analog Output)
(VPOS − 1 V) to (VNEG + 1 V)
Output Short-Circuit Duration Momentary
Output Short-Circuit Current 80 mA
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature
(Soldering, 10 sec)
300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 7. Thermal Resistance
Package Type θ
JA
θ
JC
θ
JB
ψ
JT
ψ
JB
Unit
304-Ball BGA 14 1 6.5 0.6 5.7 °C/W
POWER DISSIPATION
The AD8104/AD8105 are operated with ±2.5 V or +5 V
supplies and can drive loads down to 100 , resulting in a large
range of possible power dissipations. For this reason, extra care
must be taken derating the operating conditions based on
ambient temperature.
Packaged in a 304-ball BGA, the AD8104/AD8105 junction-to-
ambient thermal impedance (θ
JA
) is 14°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure. The following curve shows the range of allowed
internal die power dissipations that meet these conditions over
the −40°C to +85°C ambient temperature range. When using
Tabl e 6, do not include external load power in the maximum
power calculation, but do include load current dropped on the
die output transistors.
8
4
15 85
MAXIMUM POWER (W)
AMBIENT TEMPERATURE (°C)
T
J
= 150°C
7
6
5
25 35 45 55 65 75
06612-004
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION