Datasheet

AD7849
Rev. C | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 5.
Parameter Rating
V
DD
to DGND −0.4 V to +17 V
V
CC
to DGND
1
−0.4 V, V
DD
+ 0.4 V or
+7 V (whichever is
lower)
V
SS
to DGND −0.4 V to −17 V
V
REF+
to DGND V
DD
+ 0.4 V, V
SS
− 0.4 V
V
REF−
to DGND V
DD
+ 0.4 V, V
SS
− 0.4 V
V
OUT
to DGND
2
V
DD
+ 0.4 V, V
SS
− 0.4 V
or ±10 V (whichever is
lower)
R
OFS
to DGND V
DD
+ 0.4 V, V
SS
− 0.4 V
Digital Input Voltage to DGND −0.4 V to V
CC
+ 0.4 V
Input Current to any Pin Except Supplies
3
±10 mA
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
20-Lead PDIP
Power Dissipation 875 mW
θ
JA
Thermal Impedance 102°C/W
Lead Temperature (Soldering, 10 sec) 260°C
20-Lead SOIC
Power Dissipation 875 mW
θ
JA
Thermal Impedance 74°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
V
CC
must not exceed V
DD
by more than 0.4 V. If it is possible for this to
happen during power-up or power-down (for example, if V
CC
is greater than
0.4 V while V
DD
is still 0 V), the following diode protection scheme ensures
protection.
SD103C
1N5711
1N5712
1N4148
V
DD
V
CC
V
DD
V
CC
AD7849
01008-002
2
VOUT can be shorted to DGND, + 10 V, − 10 V, provided that the power
dissipation of the package is not exceeded.
3
Transient currents of up to 100 mA do not cause SCR latch-up.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION