Datasheet

REV. C–4–
AD674B/AD774B
TIMING—STAND ALONE MODE (Figures 4a and 4b)
J, K, A, B Grades T Grade
Parameter Symbol Min Typ Max Min Typ Max Unit
Data Access Time t
DDR
150 150 ns
Low R/C Pulsewidth t
HRL
50 50 ns
STS Delay from R/C t
DS
200 225 ns
Data Valid After R/C Low t
HDR
25 25 ns
STS Delay After Data Valid t
HS
30 200 600 30 200 600 ns
High R/C Pulsewidth t
HRH
150 150 ns
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
V
CC
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +16.5 V
V
EE
to Digital Common . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
V
LOGIC
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . . ± 1 V
Digital Inputs to Digital Common . . . –0.5 V to V
LOGIC
+0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . V
EE
to V
CC
20 V
IN
to Analog Common . . . . . . . . . . . . . . . . . . . . . . ± 24 V
REF OUT . . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to V
CC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
R/C
STS
DB11–DB0
DATA
VAL ID
DATA VALID
t
HRL
t
DS
HIGH–Z
t
HS
t
HDR
t
C
Flgure 4a. Standalone Mode Timing Low Pulse R/ C
R/C
STS
DB11–DB0
HIGH–Z HIGH–Z
DATA
VAL ID
t
HRH
t
DS
t
DDR
t
HDR
t
C
t
HL
Figure 4b. Standalone Mode Timing High Pulse for R/ C
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD674B/AD774B features proprietary ESD protection circuitry, permanent damage may occur
on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Conversion INL Package Package
Model
l
Temperature Time (max) (T
MIN
to T
MAX
) Description Option
2
AD674BJN 0°C to 70°C 15 µs ± 1 LSB Plastic DIP N-28
AD674BKN 0°C to 70°C 15 µs ±1/2 LSB Plastic DIP N-28
AD674BAR –40°C to +85°C 15 µs ±1 LSB Plastic SOIC R-28
AD674BBR –40°C to +85°C 15 µs ± 1/2 LSB Plastic SOIC R-28
AD674BAD –40°C to +85°C 15 µs ±1 LSB Ceramic DIP D-28
AD674BBD –40°C to +85°C 15 µs ±1/2 LSB Ceramic DIP D-28
AD674BTD –55°C to +125°C 15 µs ± 1 LSB Ceramic DIP D-28
AD774BJN 0°C to 70°C8 µs ±1 LSB Plastic DIP N-28
AD774BKN 0°C to 70°C8 µs ± 1/2 LSB Plastic DIP N-28
AD774BAR –40°C to +85°C8 µs ±1 LSB Plastic SOIC R-28
AD774BBR –40°C to +85°C8 µs ±1/2 LSB Plastic SOIC R-28
AD774BAD –40°C to +85°C8 µs ± 1 LSB Ceramic DIP D-28
AD774BBD –40°C to +85°C8 µs ± 1/2 LSB Ceramic DIP D-28
AD774BTD –55°C to +125°C8 µs ± 1 LSB Ceramic DIP D-28
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military
Products Databook or the current AD674B/ AD774B/883B data sheet.
2
N = Plastic DIP; D = Hermetic DIP; R = Plastic SOIC.