Datasheet

AD7416/AD7417/AD7418
Rev. I | Page 7 of 24
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to AGND −0.3 V to +7 V
V
DD
to DGND −0.3 V to +7 V
Analog Input Voltage to AGND
A
IN1
to A
IN4
−0.3 V to V
DD
+ 0.3 V
Reference Input Voltage to AGND
1
−0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to DGND −0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND −0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
A Version −40°C to +125°C
B Version −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
TSSOP, Power Dissipation 450 mW
θ
JA
Thermal Impedance 120°C/W
Lead Temperature, Soldering 260°C
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
16-Lead SOIC Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 100°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
8-Lead SOIC Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 157°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
MSOP Package, Power Dissipation 450 mW
θ
JA
Thermal Impedance 206°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
If the reference input voltage is likely to exceed V
DD
by more than 0.3 V (for
example, during power-up) and the reference is capable of supplying 30 mA
or more, it is recommended to use a clamping diode between the REF
IN
pin
and the V
DD
pin. Figure 5 shows how the diode should be connected.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
REF
IN
BAT81
AD7417
V
DD
01126-025
Figure 5. Diode Connection
ESD CAUTION