Datasheet

Data Sheet AD7291
Rev. C | Page 3 of 28
SPECIFICATIONS
V
DD
= 2.8 V to 3.6 V; V
DRIVE
= 1.65 V to 3.6 V; f
SCL
= 400 kHz, fast SCLK mode; V
REF
= 2.5 V internal/external; T
A
= −40°C to +125°C,
unless otherwise noted.
Table 2.
Parameter Min Typ Max Unit
1
Test Conditions/Comments
DYNAMIC PERFORMANCE
f
IN
= 1 kHz sine wave
Signal-to-Noise Ratio (SNR)
2
70 71 dB
Signal-to-Noise (+ Distortion) Ratio (SINAD)
2
70 71 dB
Total Harmonic Distortion (THD)
2
−84 −78 dB
Spurious-Free Dynamic Range (SFDR) −85 −80 dB
Intermodulation Distortion (IMD)
f
A
= 5.4 kHz, f
B
= 4.6 kHz
Second-Order Terms −88 dB
Third-Order Terms −88 dB
Channel-to-Channel Isolation −100 dB f
IN
= 10 kHz
Full Power Bandwidth
3
30 MHz At 3 dB
10 MHz At 0.1 dB
DC ACCURACY
Resolution 12 Bits
Integral Nonlinearity (INL)
2
±0.5 ±1 LSB
Differential Nonlinearity (DNL)
2
±0.5
±0.99
LSB
Guaranteed no missed codes to 12 bits
Offset Error
2
±2 ±4.5 LSB
Offset Error Matching
2
±2.5 ±4.5 LSB
Offset Temperature Drift 4 ppm/°C
Gain Error
2
±1 ±4 LSB
Gain Error Matching
2
±1
±2.5
LSB
Gain Temperature Drift 0.5 ppm/°C
ANALOG INPUT
Input Voltage Ranges 0 V
REF
V
DC Leakage Current ±0.01 ±1 µA
Input Capacitance
3
34 pF When in track
8 pF When in hold
REFERENCE INPUT/OUTPUT
Reference Output Voltage
4
2.4925 2.5 2.5075 V ±0.3% maximum at 25°C
Long-Term Stability 150 ppm For 1000 hours
Output Voltage Hysteresis 50 ppm
Reference Input Voltage Range
5
1 2.5 V
DC Leakage Current ±0.01 ±1 µA External reference applied to Pin V
REF
V
REF
Output Impedance 1 Ω
Reference Temperature Coefficient 12 35 ppm/°C
V
REF
Noise
3
60 µV rms Bandwidth = 10 MHz
LOGIC INPUTS (SDA, SCL)
Input High Voltage, V
INH
0.7 × V
DRIVE
V
Input Low Voltage, V
INL
0.3 × V
DRIVE
V
Input Current, I
IN
±0.01 ±1 µA V
IN
= 0 V or V
DRIVE
Input Capacitance, C
IN
3
6
pF
Input Hysteresis, V
HYST
0.1 × V
DRIVE
V
LOGIC OUTPUTS
Output High Voltage, V
OH
V
DRIVE
− 0.3 V V
DRIVE
< 1.8
V
DRIVE
− 0.2 V V
DRIVE
≥ 1.8
Output Low Voltage, V
OL
0.4 V I
SINK
= 3 mA
0.6 V I
SINK
= 6 mA