Datasheet

AD586
REV. C
–3–
The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 258C
only. (T
A
= +258C, V
IN
= +15 V unless otherwise noted)
DlE SPECIFlCATIONS
AD586JCHIPS
Parameter Min Typ Max Units
Output Voltage 4.980 5.020 V
Gain Adjustment +6 %
–2 %
Line Regulation
10.8 V < + V
IN
< 36 V 100 ±µV/V
Load Regulation
Sourcing 0 < I
OUT
< 10 mA 100 µV/mA
Sinking –10 < I
OUT
< 0 mA 400 µV/mA
Quiescent Current 3 mA
Short-Circuit Current-to-Ground 60 mA
NOTES
1
Both V
OUT
pads should be connected to the output.
Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.
Die Dimensions: The dimensions given have a tolerance of ±2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices does not
recommend gold-backed dice for most applications.
Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular
edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. The
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a layer of glassivation. All
areas are covered except bonding pads and scribe lines.
Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum.
Minimum thickness is 10,000Å.
Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation
windows have 3.5 mils by 3.5 mils minimum.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD586 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Initial Temperature Temperature Package
Model
1
Error Coefficient Range Option
2
AD586JN 20 mV 25 ppm/°C0°C to +70°C N-8
AD586JQ 20 mV 25 ppm/°C0°C to +70°C Q-8
AD586JR 20 mV 25 ppm/°C0°C to +70°C SO-8
AD586KN 5 mV 15 ppm/°C0°C to +70°C N-8
AD586KQ 5 mV 15 ppm/°C0°C to +70°C Q-8
AD586KR 5 mV 15 ppm/°C0°C to +70°C SO-8
AD586LN 2.5 mV 5 ppm/°C0°C to +70°C N-8
AD586LR 2.5 mV 5 ppm/°C0°C to +70°C SO-8
AD586MN 2 mV 2 ppm/°C0°C to +70°C N-8
AD586AR 5 mV 15 ppm/°C–40°C to +85°C SO-8
AD586BR 2.5 mV 5 ppm/°C–40°C to +85°C SO-8
AD586LQ 2.5 mV 5 ppm/°C0°C to +70°C Q-8
AD586SQ 10 mV 20 ppm/°C –55°C to +125°C Q-8
AD586TQ 2.5 mV 10 ppm/°C –55°C to +125°C Q-8
AD586JCHIPS 20 mV 25 ppm/°C0°C to +70°C
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military
Products Databook or current AD586/883B data sheet.
2
N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).