Datasheet

AD5530/AD5531
Rev. B | Page 6 of 20
DAISY-CHAINING AND READBACK TIMING CHARACTERISTICS
V
DD
= 10.8 V to 16.5 V, V
SS
= −10.8 V to −16.5 V; GND = 0 V; R
L
= 5 kΩ and C
L
= 220 pF to GND. All specifications T
MIN
to T
MAX
, unless
otherwise noted.
Table 5.
Parameter Limit at T
MIN
, T
MAX
Unit Description
1, 2, 3
f
MAX
2 MHz max SCLK frequency
t
1
500 ns min SCLK cycle time
t
2
200 ns min SCLK low time
t
3
200 ns min SCLK high time
t
4
50 ns min
SYNC to SCLK falling edge setup time
t
5
40 ns min
SCLK falling edge to
SYNC rising edge
t
6
50 ns min
Min
SYNC high time
t
7
40 ns min Data setup time
t
8
15 ns min Data hold time
t
12
50 ns min
CLR pulse width
t
13
130 ns min SCLK falling edge to SDO valid
t
14
50 ns max SCLK falling edge to SDO invalid
t
15
50 ns min
RBEN to SCLK falling edge setup time
t
16
50 ns min
RBEN hold time
t
17
100 ns min
RBEN falling edge to SDO valid
1
Guaranteed by design, not subject to production test.
2
Sample tested during initial release and after any redesign or process change that can affect this parameter. All input signals are measured with t
R
= t
F
= 5 ns (10% to
90% of V
DD
) and timed from a voltage level of (V
IL
+ V
IH
)/2.
3
SDO; R
PULLUP
= 5 kΩ, C
L
= 15 pF
00938-003
SCLK
SYNC
SDIN
SDO
(DAISY-
CHAINING)
RBEN
SDO
(READBACK)
MSB
DB15 DB14 DB11 DB0
DB15 DB11 DB0
LSB
MSB LSB
MSB LSB
RB0RB1300
t
1
t
3
t
2
t
5
t
4
t
6
t
7
t
8
t
13
t
14
t
15
t
16
t
13
t
14
t
17
Figure 3. Timing Diagram for Daisy-Chaining and Readback Mode