Datasheet

AD5362/AD5363
Rev. A | Page 5 of 28
Parameter B Version
1
Unit Test Conditions/Comments
DIGITAL OUTPUTS (SDO, BUSY, GPIO, PEC)
Output Low Voltage 0.5 V max Sinking 200 μA
Output High Voltage (SDO) DV
CC
− 0.5 V min Sourcing 200 μA
High Impedance Leakage Current ±5 μA max SDO only
High Impedance Output Capacitance
2
10 pF typ
TEMPERATURE SENSOR (TEMP_OUT)
2
Accuracy ±1 °C typ @ 25°C
±5 °C typ −40°C < T < +85°C
Output Voltage at 25°C 1.46 V typ
Output Voltage Scale Factor 4.4 mV/°C typ
Output Load Current 200 μA max Current source only
Power-On Time 10 ms typ To within ±5°C
POWER REQUIREMENTS
DV
CC
2.5/5.5 V min/V max
V
DD
8/16.5 V min/V max
V
SS
−16.5/−4.5 V min/V max
Power Supply Sensitivity
2
∆Full Scale/∆V
DD
−75 dB typ
∆Full Scale/∆V
SS
−75 dB typ
∆Full Scale/∆DV
CC
−90 dB typ
DI
CC
2 mA max DV
CC
= 5.5 V, V
IH
= DV
CC
, V
IL
= GND
I
DD
8.5 mA max Outputs = 0 V and unloaded
I
SS
8.5 mA max Outputs = 0 V and unloaded
Power-Down Mode Bit 0 in the control register is 1
DI
CC
5 μA typ
I
DD
35 μA typ
I
SS
−35 μA typ
Power Dissipation
Power Dissipation Unloaded (P) 209 mW max V
SS
= −12 V, V
DD
= 12 V, DV
CC
= 2.5 V
Junction Temperature
4
130 °C max T
J
= T
A
+ P
TOTAL
× θ
JA
1
Temperature range for B version: −40°C to +85°C. Typical specifications are at 25°C.
2
Guaranteed by design and characterization; not production tested.
3
VOUTx refers to any of VOUT0 to VOUT7.
4
θ
JA
represents the package thermal impedance.