Datasheet
AD5233
Rev. B | Page 3 of 32
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, AND 100 kΩ VERSIONS
V
DD
= 3 V ± 10% or 5 V ± 10%, V
SS
= 0 V, V
A
= V
DD
, V
B
= 0 V, −40°C < T
A
< +85°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ
1
Max Unit
DC CHARACTERISTICS,
RHEOSTAT MODE
Resistor Differential Nonlinearity
2
R-DNL R
WB
, V
A
= NC, monotonic −0.5 ±0.1 +0.5 LSB
Resistor Integral Nonlinearity
2
R-INL R
WB
, V
A
= NC −0.5 ±0.1 +0.5 LSB
Nominal Resistor Tolerance ∆R
AB
/R
AB
D = 0x3F −40 +20 %
Resistance Temperature Coefficient (∆R
WB
/R
WB
)/∆T × 10
6
600 ppm/°C
Wiper Resistance R
W
I
W
= 100 μA, code = half scale 15 100 Ω
DC CHARACTERISTICS,
POTENTIOMETER DIVIDER MODE
Resolution N 6 Bits
Differential Nonlinearity
3
DNL Monotonic −0.5 +0.1 +0.5 LSB
Integral Nonlinearity
3
INL −0.5 +0.1 +0.5 LSB
Voltage Divider Temperature
Coefficient
(∆V
W
/V
W
)/∆T × 10
6
Code = half scale 15 ppm/°C
Full-Scale Error V
WFSE
Code = full scale −1.5 0 % FS
Zero-Scale Error V
WZSE
Code = zero scale 0 1.5 % FS
RESISTOR TERMINALS
Terminal Voltage Range
4
V
A
, V
B
, V
W
V
SS
V
DD
V
Capacitance A, Capacitance B
5
C
A
, C
B
f = 1 MHz, measured to GND,
code = half scale
35 pF
Capacitance W
5
C
W
f = 1 MHz, measured to GND,
code = half scale
35 pF
Common-Mode Leakage Current
5, 6
I
CM
V
W
= V
DD
/2 0.015 1 μA
DIGITAL INPUTS AND OUTPUTS
Input Logic High V
IH
With respect to GND, V
DD
= 5 V 2.4 V
With respect to GND, V
DD
= 3 V 2.1 V
With respect to GND,
V
DD
= 2.5 V, V
SS
= −2.5 V
2.0 V
Input Logic Low V
IL
With respect to GND, V
DD
= 5 V 0.8 V
With respect to GND, V
DD
= 3 V 0.6 V
With respect to GND,
V
DD
= 2.5 V, V
SS
= −2.5 V
0.5 V
Output Logic High (SDO, RDY) V
OH
R
PULL-UP
= 2.2 kΩ to 5 V
(see Figure 35)
4.9 V
Output Logic Low V
OL
I
OL
= 1.6 mA, V
LOGIC
= 5 V
(see Figure 35)
0.4 V
Input Current I
IL
V
IN
= 0 V or V
DD
±2.5 μA
Input Capacitance
5
C
IL
4 pF
Output Current
5
I
O1
, I
O2
V
DD
= 5 V, V
SS
= 0 V, T
A
= 25°C,
sourcing only
50 mA
V
DD
= 2.5 V, V
SS
= 0 V, T
A
= 25°C,
sourcing only
7 mA