Datasheet

AD5232 Data Sheet
Rev. C | Page 4 of 24
Parameter Symbol Conditions Min Typ
1
Max Unit
DYNAMIC CHARACTERISTICS
5, 9
Bandwidth −3 dB, BW_10kΩ, R = 10 kΩ 500 kHz
Total Harmonic Distortion THD
w
V
A
= 1 V rms, V
B
= 0 V, f = 1 kHz, R
AB
= 10 kΩ 0.022 %
V
A
= 1 V rms, V
B
= 0 V, f = 1 kHz, R
AB
= 50 kΩ, 100 kΩ 0.045 %
V
W
Settling Time
t
S
V
DD
= 5 V, V
SS
= 0 V, V
A
= V
DD
, V
B
= 0 V,
0.65/3/6
µs
V
W
= 0.50% error band, Code 0x00 to Code 0x80
for R
AB
= 10 kΩ/50 kΩ/100 kΩ
Resistor Noise Voltage e
N_WB
R
WB
= 5 kΩ, f= 1 kHz 9 nV/√Hz
Crosstalk (C
W1
/C
W2
) C
T
V
A
= V
DD
, V
B
= 0 V, measure V
W
with −5 nV-sec
adjacent VR making full-scale code change
Analog Crosstalk (C
W1
/C
W2
) C
TA
V
A1
= V
DD
, V
B1
= 0 V, measure V
W1
with V
W2
= −70 dB
5 V p-p @ f = 10 kHz; Code
1
= 0x80; Code
2
= 0xFF
FLASH/EE MEMORY RELIABILITY
Endurance
10
100
kCycles
Data Retention
11
100 Years
1
Typical parameters represent average readings at 25°C and V
DD
= 5 V.
2
Resistor position nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. I
W
~ 50 µA @ V
DD
= 2.7 V and I
W
~
400 µA @ V
DD
= 5 V for the R
AB
= 10 kΩ version, I
W
~ 50 µA for the R
AB
= 50 kΩ version, and I
W
~ 25 µA for the R
AB
= 100 kΩ version (see Figure 22).
3
INL and DNL are measured at V
W
with the RDACx configured as a potentiometer divider similar to a voltage output digital-to-analog converter. V
A
= V
DD
and V
B
= V
SS
.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 23).
4
The A, B, and W resistor terminals have no limitations on polarity with respect to each other. Dual supply operation enables ground-referenced bipolar signal
adjustment.
5
Guaranteed by design; not subject to production test.
6
Common-mode leakage current is a measure of the dc leakage from any A, B, or W terminal to a common-mode bias level of V
DD
/2.
7
Transfer (XFR) mode current is not continuous. Current is consumed while the EEMEMx locations are read and transferred to the RDACx register (see Figure 13).
8
P
DISS
is calculated from (I
DD
× V
DD
) + (I
SS
× V
SS
).
9
All dynamic characteristics use V
DD
= +2.5 V and V
SS
= −2.5 V, unless otherwise noted.
10
Endurance is qualified to 100,000 cycles per JEDEC Std. 22, Method A117 and measured at −40°C, +25°C, and +85°C. Typical endurance at +25°C is 700,000 cycles.
11
The retention lifetime equivalent at junction temperature (T
J
) = 55°C, as per JEDEC Std. 22, Method A117. Retention lifetime, based on an activation energy of 0.6 eV,
derates with junction temperature as shown in Figure 44 in the Flash/EEMEM Reliability section. The AD5232 contains 9,646 transistors. Die size = 69 mil × 115 mil,
7,993 sq. mil.