Datasheet

Data Sheet AD5116
Rev. B | Page 5 of 16
INTERFACE TIMING SPECIFICATIONS
V
DD
= 2.3 V to 5.5 V; all specifications T
MIN
to T
MAX
, unless otherwise noted.
Table 3.
Parameter Test Conditions/Comments Min Typ Max Unit Description
t
1
8 ms Debounce time
t
2
1 sec Manual to auto scan time
t
3
140 ms Auto scan step
t
4
ASE
= 0 V, PD = GND, PU = GND 1 sec Auto save execute time
t
5
ASE
= V
DD
8 ms Low pulse time to manual storage
t
EEPROM_PROGRAM
1
15
50
ms
Memory program time
t
POWER_UP
2
50 µs Power-on EEPROM restore time
1
EEPROM program time depends on the temperature and EEPROM write cycles. Higher timing is expected at a lower temperature and higher write cycles.
2
Maximum time after V
DD
is equal to 2.3 V.
TIMING DIAGRAMS
09657-002
PU
R
W
t
1
PD (LOW)
Figure 2. Manual Increment Mode Timing
09657-003
PU
t
1
t
2
t
3
PD (LOW)
R
W
Figure 3. Auto Increment Mode Timing
09657-004
PD
t
1
t
4
EEPROM DATA NEW DATA
t
EEPROM
PROGRAM
R
W
ASE (LOW)
Figure 4. Auto Save Mode Timing
09657-005
PD/PU (LOW)
t
5
EEPROM
DATA NEW DATA
t
EEPROM
PROGRAM
ASE
Figure 5. Manual Save Mode Timing
09657-006
PD
t
1
R
W
R
W
= 45Ω
ASE
Figure 6. End Scale Indication Timing