Datasheet

Data Sheet AD5116
Rev. B | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
5 kΩ, 10 kΩ, and 80 kΩ versions: V
DD
= 2.3 V to 5.5 V, V
A
= V
DD
, V
B
= 0 V, −40°C < T
A
< +125°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ
1
Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution N 6 Bits
Resistor Integral Nonlinearity
2
R-INL R
AB
= 5 kΩ, V
DD
= 2.3 V to 2.7 V −2.5 ±0.5 +2.5 LSB
R
AB
= 5 kΩ, V
DD
= 2.7 V to 5.5 V −1 ±0.25 +1 LSB
R
AB
= 10 kΩ −1 ±0.25 +1 LSB
R
AB
= 80 kΩ
−0.25
±0.1
+0.25
LSB
Resistor Differential Nonlinearity
2
R-DNL −1 ±0.25 +1 LSB
Nominal Resistor Tolerance ΔR
AB
/R
AB
−8 +8 %
Resistance Temperature Coefficient
3
(ΔR
AB
/R
AB
)/ΔT × 10
6
Code = full scale 35 ppm/°C
Wiper Resistance
R
W
Code = zero scale
70
140
Ω
R
BS
Code = bottom scale 45 80 Ω
R
TS
Code = top scale 70 140 Ω
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Integral Nonlinearity
4
INL −0.5 ±0.15 +0.5 LSB
Differential Nonlinearity
4
DNL −0.5 ±0.15 +0.5 LSB
Full-Scale Error V
WFSE
R
AB
= 5 kΩ −2.5 LSB
R
AB
=10 kΩ
−1.5
LSB
R
AB
= 80 kΩ −1 LSB
Zero-Scale Error V
WZSE
R
AB
= 5 kΩ +1.5 LSB
R
AB
=10 kΩ +1 LSB
R
AB
= 80 kΩ +0.25 LSB
Voltage Divider Temperature Coefficient
3
(ΔV
W
/V
W
)/ΔT × 10
6
Code = half scale ±10 ppm/°C
RESISTOR TERMINALS
Maximum Continuous I
A
, I
B
, and I
W
Current
3
R
AB
= 5 kΩ, 10 kΩ −6 +6 mA
R
AB
= 80 kΩ
−1.5
+1.5
mA
Terminal Voltage Range
5
GND V
DD
V
Capacitance A, Capacitance B
3
, 6
C
A
, C
B
f = 1 MHz, measured to GND,
code = half scale, V
W
= V
A
= 2.5 V
or V
W
= V
B
= 2.5 V
20 pF
Capacitance W
3, 6
C
W
f = 1 MHz, measured to GND,
code = half scale, V
A
= V
B
= 2.5 V
35
pF
Common-Mode Leakage Current
3
V
A
= V
W
= V
B
50 nA
DIGITAL INPUTS (PU AND PD)
Input Logic
3
High V
INH
2 V
Low V
INL
0.8 V
Input Current
3
I
N
±1
µA
Input Capacitance
3
C
IN
5 pF
DIGITAL OUTPUT (
ASE
)
Output High Voltage
3
V
OH
I
SINK
= 2 mA, V
DD
= 5 V
4.8
V
Output Current
3
I
O
V
DD
= 5 V 16 mA
Three-State Leakage Current
3
I
OZ
±1 µA
Input Capacitance
3
C
IN
5 pF