Datasheet
AD2S1210
Rev. A | Page 4 of 36
Parameter Min Typ Max Unit Conditions/Comments
Tracking Rate
10-bit 3125 rps CLKIN = 10.24 MHz
2500 CLKIN = 8.192 MHz
12-bit 1250 rps CLKIN = 10.24 MHz
1000 CLKIN = 8.192 MHz
14-bit 625 rps CLKIN = 10.24 MHz
500 CLKIN = 8.192 MHz
16-bit 156.25 rps CLKIN = 10.24 MHz
125 CLKIN = 8.192 MHz
Acceleration Error
10-bit 30 arc min At 50,000 rps
2
, CLKIN = 8.192 MHz
12-bit 30 arc min At 10,000 rps
2
, CLKIN = 8.192 MHz
14-bit 30 arc min At 2500 rps
2
, CLKIN = 8.192 MHz
16-bit 30 arc min At 125 rps
2
, CLKIN = 8.192 MHz
Settling Time 10° Step Input
10-bit 0.6 0.9 ms To settle to within ±2 LSB , CLKIN = 8.192 MHz
12-bit 2.2 3.1 ms To settle to within ±2 LSB, CLKIN = 8.192 MHz
14-bit 6.5 9.0 ms To settle to within ±2 LSB , CLKIN = 8.192 MHz
16-bit 27.5 40 ms To settle to within ±2 LSB, CLKIN = 8.192 MHz
Settling Time 179° Step Input
10-bit 1.5 2.2 ms To settle to within ±2 LSB , CLKIN = 8.192 MHz
12-bit 4.75 6.0 ms To settle to within ±2 LSB, CLKIN = 8.192 MHz
14-bit 10.5 14.7 ms To settle to within ±2 LSB , CLKIN = 8.192 MHz
16-bit 45 66 ms To settle to within ±2 LSB, CLKIN = 8.192 MHz
EXC,
EXC
OUTPUTS
Voltage 3.2 3.6 4.0 V p-p Load ±100 μA, typical differential output
(EXC to
EXC
) = 7.2 V p-p
Center Voltage 2.40 2.47 2.53 V
Frequency 2 20 kHz
EXC/
EXC
DC Mismatch
30 mV
EXC/
EXC
AC Mismatch
100 mV
THD −58 dB First five harmonics
VOLTAGE REFERENCE
REFOUT 2.40 2.47 2.53 V ±I
OUT
= 100 μA
Drift 100 ppm/°C
PSRR −60 dB
CLKIN, XTALOUT
6
V
IL
Voltage Input Low 0.8 V
V
IH
Voltage Input High 2.0 V
LOGIC INPUTS
V
IL
Voltage Input Low 0.8 V V
DRIVE
= 2.7 V to 5.25 V
0.7 V V
DRIVE
= 2.3 V to 2.7 V
V
IH
Voltage Input High 2.0 V V
DRIVE
= 2.7 V to 5.25 V
1.7 V V
DRIVE
= 2.3 V to 2.7 V
I
IL
Low Level Input Current (Non
Pull-Up)
10 μA
I
IL
Low Level Input Current (Pull-Up) 80 μA
RES0, RES1,
RD
, WR/FSYNC, A0, A1, and RESET pins
I
IH
High Level Input Current −10 μA
LOGIC OUTPUTS
V
OL
Voltage Output Low 0.4 V V
DRIVE
= 2.3 V to 5.25 V
V
OH
Voltage Output High 2.4 V V
DRIVE
= 2.7 V to 5.25 V
2.0 V V
DRIVE
= 2.3 V to 2.7 V
I
OZH
High Level Three-State Leakage −10 μA
I
OZL
Low Level Three-State Leakage 10 μA