User guide

Chapter 9: Timing Diagrams 9–21
DDR3 High-Performance Controllers II
December 2010 Altera Corporation External Memory Interface Handbook Volume 3
Section II. DDR3 SDRAM Controller with ALTMEMPHY IP User Guide
The following sequence corresponds with the numbered items in Figure 9–11:
1. The user logic asserts the first
local_write_req signal with a size of 2 and an
address of
0×000001 . The local_ready signal is asserted along with the
local_write_req signal, which indicates that the controller has accepted this
request, and the user logic can request another read or write in the following clock
cycle. If the
local_ready signal was not asserted, the user logic must keep the
write request, size, and address signals asserted until the
local_ready signal is
registered high. The local address 0x000001 is mapped to the following memory
address in half-rate mode:
mem_row_address = 0×0000
mem_col_address = 0×000001<<2 = 0×000004
mem_bank_address = 0×00
2. The user logic asserts the second local_write_req signal with a size of 2 and an
address of
0×000003 . The local address 0×000003 is mapped to the following
memory address in half-rate mode:
mem_row_address = 0×0000
mem_col_address = 0×000003<<2 = 0×00000C
mem_bank_address = 0×00
3. The controller issues the necessary memory command and address signals to the
ALTMEMPHY megafunction for it to send to the memory device.
4. The controller asserts the
afi_wdata_valid signal to indicate to the ALTMEMPHY
megafunction that valid write data and write data masks are present on the inputs
to the ALTMEMPHY megafunction.
5. The controller asserts the
afi_dqs_burst signals to control the timing of the DQS
signal that the ALTMEMPHY megafunction issues to the memory.
6. The ALTMEMPHY megafunction issues the write command, and sends the write
data and write DQS to the memory.
7. The controller generates another write because the first write is to a non-aligned
memory address,
0×0004 . The controller performs the second write burst at the
memory address of
0×0008 .