Datasheet

®
32K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITION MIN. TYP.
*5
MAX. UNIT
SupplyVoltageV
CC
V5.53.37.2
InputHighVoltageV
IH
*1
V-V
2.4
CC
+0.5 V
InputLowVoltageV
IL
*2
V6.0-5.0-
Input Leakage Current I
LI
V
CC
V
IN
V
SS
- 1 - 1
µ
A
Output Leakage
Current
I
LO
V
CC
V
OUT
V
SS
,
Output Disabled
- 1 - 1
µ
A
Output High Voltage V
OH
I
OH
= -1mA 2.4 3.0 - V
Output Low Voltage V
OL
I
OL
= 2mA - - 0.4 V
-55 -
15 45
mA
I
CC
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA
.
Average Operating
Power supply Current
I
CC1
Cycle time = 1
µ
s
CE#
0.2V and I
I/O
= 0mA
other pins at 0.2V or V
CC
-0.2V
- 3 10 mA
I
SB
CE# = V
IH
Am31-
-C
- 1
15
*4
µ
A
Standby Power
Supply Current
I
SB1
-I
- 1 30
*4
µ
A
Notes: C = Commercial Temperature I = Industrial Temperature
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. 10
µ
A for special request
5. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25ºC
CAPACITANCE (TA = 25 , f? = 1.0MHz)
PARAMETER SYMBOL MIN. MAX UNIT
Input Capacitance
C
IN
-
6 pF
Input/Output Capacitance
C
I/O
-
8 pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
VotV2.0sleveLesluPtupnI
CC
- 0.2V
sn3semiTllaFdnaesiRtupnI
Input and Output Timing Reference Levels 1.5V
CdaoLtuptuO
L
= 50pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
February 2007
AS6C62256
Alliance Memory Inc.
Page 3 of 12
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CE#
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V
CC
- 0.2V
Others at 0.2V or Vcc-0.2V
March 23,2016 v1.2