Datasheet

®®
DATA RETENTION CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V
CC
for Data Retention V
DR
CE# V≧
CC
- 0.2V
or CE2 ≦ 0.2V
1.5 - 5.5 V
C** - 0.5 12 µA
Data Retention Current I
DR
V
CC
= 1.5V
CE# V≧
CC
- 0.2V
or CE2 ≦ 0.2V
I** 0 30
µ
A
Chip Disable to Data
Retention Time
t
CDR
See Data Retention
Waveforms (below)
0 - - ns
Recovery Time t
R
t
RC
*
- - ns
t
RC
*
= Read Cycle Time C=Commercial temp/I = Industrial temp**
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
(
CE#
controlled)
Vcc
CE#
VDR ≧ 1.5V
CE# V≧ cc-0.2V
Vcc(min.)
V
IH
tRtCDR
VIH
Vcc(min.)
Low Vcc Data Retention Waveform (2)
(CE2 controlled)
Vcc
CE2
VDR ≧ 1.5V
CE2 ≦ 0.2V
Vcc(min.)
V
IL
tRtCDR
VIL
Vcc(min.)
February 2007
128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008
02/February/07, v 1.0
Alliance Memory Inc.
Page 7 of 14