Datasheet

Table 27. Electrical Characteristics and Recommended A.C. Operating Conditions
(V
DD
= 1.8V  0.1V, T
OPER
= 0~85 C(Commercial), T
OPER
= -40~95 °C(Industrial) )
Symbol
Parameter
-25
Specifi c
Notes
Min.
Max.
t
CK(avg)
Average clock period
CL=3
5
8
ns
15, 33, 34
CL=4
3.75
8
ns 15, 33, 34
CL=5
2.5
8 ns
15, 33, 34
CL=6
2.5
8 ns
15, 33, 34
CL=7
-
- ns
15, 33, 34
t
CH(avg)
Average clock HIGH pulse width
0.48
0.52 t
CK
34, 35
t
CL(avg)
Average Clock LOW pulse width
0.48
0.52 t
CK
34, 35
WL
Write command to DQS associated clock edge
RL-1
t
CK
t
DQSS
DQS latching rising transitions to associated
clock edges
-0.25
0.25 t
CK
28
t
DSS
DQS falling edge to CK setup time
0.2
- t
CK
28
t
DSH
DQS falling edge hold time from CK
0.2
- t
CK
t
DQSH
DQS input HIGH pulse width
0.35
- t
CK
t
DQSL
DQS input LOW pulse width
0.35
- t
CK
t
WPRE
Write preamble
0.35
- t
CK
t
WPST
Write postamble
0.4
0.6 t
CK
10
t
IS(base)
Address and Control input setup time
0.175
- ns
5, 7, 9,
22, 27
t
IH(base)
Address and Control input hold time
0.25
- ns
5, 7, 9,
23, 27
t
IPW
Control & Address input pulse width for each
input
0.6
- t
CK
t
DS(base)
DQ & DM input setup time
0.05
- ns
6-8, 20,
26, 29
t
DH(base)
DQ & DM input hold time
0.125
- ns
6-8, 21,
26, 29
t
DIPW
DQ and DM input pulse width for each input
0.35
- t
CK
t
AC
DQ output access time from CK, CK#
-0.4
0.4 ns
38
t
DQSCK
DQS output access time from CK, CK#
-0.35
0.35 ns
38
t
HZ
Data-out high-impedance time from CK, CK#
-
t
AC
(max) ns
18, 38
t
LZ(DQS)
DQS(DQS#) low-impedance time from CK,
CK#
t
AC
(min)
t
AC
(max) ns
18, 38
t
LZ(DQ)
DQ low-impedance time from CK, CK#
2t
AC
(min)
t
AC
(max) ns
18, 38
t
DQSQ
DQS-DQ skew for DQS and associated DQ
signals
-
0.2 ns
13
t
HP
CK half pulse width
min
(t
CH
,t
CL
)
- ns
11, 12, 35
t
QHS
DQ hold skew factor
-
0.3 ns
12, 36
t
QH
DQ/DQS output hold time from DQS
t
HP
-t
QHS
- ns
37
t
RPRE
Read preamble
0.9
1.1 t
CK
19, 39
t
RPST
Read postamble
0.4
0.6 t
CK
19, 40
t
RRD
Active to active command period
10
- ns
4, 30
t
FAW
Four Activate Window
45
- ns
4, 30
t
CCD
CAS# to CAS# command delay
2
- t
CK
t
WR
Write recovery time
15
- ns
30
t
DAL
Auto Power write recovery + precharge time
WR + t
RP
- ns
14, 31
t
WTR
Internal Write to Read Command Delay
7.5
- ns
3, 24, 30
t
RTP
Internal read to precharge command delay
7.5
- ns
3, 30
t
CKE
CKE minimum pulse width
3
- t
CK
25
t
XSNR
Exit self refresh to non-read command delay
t
RFC
+10
- ns
30
t
XSRD
Exit self refresh to a read command
200
- t
CK
t
XP
Exit precharge power down to any command
2
- t
CK
t
XARD
Exit active power down to read command
2
- t
CK
1
Unit
AS4C64M16D2A-25BIN
AS4C64M16D2A-25BCN
Confidential
- 27 of 62 -
Rev.1.1 October 2017