Datasheet
Table Of Contents
- DDR3L SDRAM
- Description
- State Diagram
- Functional Description
- Functional Block Diagrams
- Ball Assignments and Descriptions
- Package Dimensions
- Electrical Specifications
- Thermal Characteristics
- Electrical Specifications – I DD Specifications and Conditions
- Electrical Characteristics – 1.35V IDD Specifications
- Electrical Specifications – DC and AC
- ODT Characteristics
- Output Driver Impedance
- Output Characteristics and Operating Conditions
- Speed Bin Tables
- Electrical Characteristics and AC Operating Conditions
- Electrical Characteristics and AC Operating Conditions
- Command and Address Setup, Hold, and Derating
- Data Setup, Hold, and Derating
- Commands – Truth Tables
- Commands
- Input Clock Frequency Change
- Write Leveling
- Initialization
- Voltage Initialization / Change
- Mode Registers
- Mode Register 0 (MR0)
- Mode Register 1 (MR1)
- Mode Register 2 (MR2)
- Mode Register 3 (MR3)
- MODE REGISTER SET (MRS) Command
- ZQ CALIBRATION Operation
- ACTIVATE Operation
- READ Operation
- WRITE Operation
- PRECHARGE Operation
- SELF REFRESH Operation
- Extended Temperature Usage
- Power-Down Mode
- RESET Operation
- On-Die Termination (ODT)
- Dynamic ODT
- Synchronous ODT Mode
- Asynchronous ODT Mode
- Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

Table 55: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
Parameter Symbol
DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600
Unit NotesMin Max Min Max Min Max Min Max
DQ Input Timing
Data setup time to
DQS, DQS#
Base (specification)
t
DS
(AC160)
90 – 40 – – – – – ps 18, 19,
44
V
REF
@ 1 V/ns 250 – 200 – – – – – ps 19, 20
Data setup time to
DQS, DQS#
Base (specification)
t
DS
(AC135)
140 – 90 – 45 – 25 – ps 18, 19,
44
V
REF
@ 1 V/ns 275 – 250 – 180 – 160 – ps 19, 20
Data hold time from
DQS, DQS#
Base (specification)
t
DH
(DC90)
160 – 110 – 75 – 55 – ps 18, 19
V
REF
@ 1 V/ns 250 – 200 – 165 – 145 – ps 19, 20
Minimum data pulse width
t
DIPW 600 – 490 – 400 – 360 – ps 41
DQ Output Timing
DQS, DQS# to DQ skew, per access
t
DQSQ – 200 – 150 – 125 – 100 ps
DQ output hold time from DQS, DQS#
t
QH 0.38 – 0.38 – 0.38 – 0.38 –
t
CK
(AVG)
21
DQ Low-Z time from CK, CK#
t
LZDQ –800 400 –600 300 –500 250 –450 225 ps 22, 23
DQ High-Z time from CK, CK#
t
HZDQ – 400 – 300 – 250 – 225 ps 22, 23
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising
t
DQSS –0.25 0.25 –0.25 0.25 –0.25 0.25 –0.27 0.27 CK 25
DQS, DQS# differential input low pulse width
t
DQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
DQS, DQS# differential input high pulse
width
t
DQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK
DQS, DQS# falling setup to CK, CK# rising
t
DSS 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# falling hold from CK, CK# rising
t
DSH 0.2 – 0.2 – 0.2 – 0.18 – CK 25
DQS, DQS# differential WRITE preamble
t
WPRE 0.9 – 0.9 – 0.9 – 0.9 – CK
DQS, DQS# differential WRITE postamble
t
WPST 0.3 – 0.3 – 0.3 – 0.3 – CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK#
t
DQSCK –400 400 –300 300 –255 255 –225 225 ps 23
DQS, DQS# rising to/from rising CK, CK#
when DLL is disabled
t
DQSCK
(DLL_DIS)
110110110110ns26
DQS, DQS# differential output high time
t
QSH 0.38 – 0.38 – 0.40 – 0.40 – CK 21
DQS, DQS# differential output low time
t
QSL 0.38 – 0.38 – 0.40 – 0.40 – CK 21
8Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics and AC Operating Conditions
74
Rev 2.0 June 2016
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