Datasheet

1.35V ODT Resistors
Table 30 provides an overview of the ODT DC electrical characteristics. The values pro-
vided are not specification requirements; however, they can be used as design guide-
lines to indicate what R
TT
is targeted to provide:
•R
TT
Ω is made up of R
TT120(PD240)
and R
TT120(PU240)
•R
TT
Ω is made up of R
TT60(PD120)
and R
TT60(PU120)
•R
TT
Ω is made up of R
TT40(PD80)
and R
TT40(PU80)
•R
TT
Ω is made up of R
TT30(PD60)
and R
TT30(PU60)
•R
TT
Ω is made up of R
TT20(PD40)
and R
TT20(PU40)
Table 30: 1.35V R
TT
Effective Impedance
MR1
[9, 6, 2]
R
TT
Resistor V
OUT
Min Nom Max Units
0, 1, 0 Ω R
TT,120PD240
0.2 × V
DDQ
0.6 1.0 1.15 RZQ/1
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/1
0.8 × V
DDQ
0.9 1.0 1.45 RZQ/1
R
TT,120PU240
0.2 × V
DDQ
0.9 1.0 1.45 RZQ/1
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/1
0.8 × V
DDQ
0.6 1.0 1.15 RZQ/1
Ω V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 RZQ/2
0, 0, 1 Ω R
TT,60PD120
0.2 × V
DDQ
0.6 1.0 1.15 RZQ/2
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/2
0.8 × V
DDQ
0.9 1.0 1.45 RZQ/2
R
TT,60PU120
0.2 × V
DDQ
0.9 1.0 1.45 RZQ/2
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/2
0.8 × V
DDQ
0.6 1.0 1.15 RZQ/2
Ω V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 RZQ/4
0, 1, 1 Ω R
TT,40PD80
0.2 × V
DDQ
0.6 1.0 1.15 RZQ/3
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/3
0.8 × V
DDQ
0.9 1.0 1.45 RZQ/3
R
TT,40PU80
0.2 × V
DDQ
0.9 1.0 1.45 RZQ/3
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/3
0.8 × V
DDQ
0.6 1.0 1.15 RZQ/3
Ω V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 RZQ/6
1, 0, 1 Ω R
TT,30PD60
0.2 × V
DDQ
0.6 1.0 1.15 RZQ/4
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/4
0.8 × V
DDQ
0.9 1.0 1.45 RZQ/4
R
TT,30PU60
0.2 × V
DDQ
0.9 1.0 1.45 RZQ/4
0.5 × V
DDQ
0.9 1.0 1.15 RZQ/4
0.8 × V
DDQ
0.6 1.0 1.15 RZQ/4
Ω V
IL(AC)
to V
IH(AC)
0.9 1.0 1.65 RZQ/8
8Gb: x4, x8, x16 DDR3L SDRAM
ODT Characteristics
51
Rev 2.0 June 2016
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