Datasheet
Table Of Contents
- DDR3L SDRAM
- Description
- State Diagram
- Functional Description
- Functional Block Diagrams
- Ball Assignments and Descriptions
- Package Dimensions
- Electrical Specifications
- Thermal Characteristics
- Electrical Specifications – I DD Specifications and Conditions
- Electrical Characteristics – 1.35V IDD Specifications
- Electrical Specifications – DC and AC
- ODT Characteristics
- Output Driver Impedance
- Output Characteristics and Operating Conditions
- Speed Bin Tables
- Electrical Characteristics and AC Operating Conditions
- Electrical Characteristics and AC Operating Conditions
- Command and Address Setup, Hold, and Derating
- Data Setup, Hold, and Derating
- Commands – Truth Tables
- Commands
- Input Clock Frequency Change
- Write Leveling
- Initialization
- Voltage Initialization / Change
- Mode Registers
- Mode Register 0 (MR0)
- Mode Register 1 (MR1)
- Mode Register 2 (MR2)
- Mode Register 3 (MR3)
- MODE REGISTER SET (MRS) Command
- ZQ CALIBRATION Operation
- ACTIVATE Operation
- READ Operation
- WRITE Operation
- PRECHARGE Operation
- SELF REFRESH Operation
- Extended Temperature Usage
- Power-Down Mode
- RESET Operation
- On-Die Termination (ODT)
- Dynamic ODT
- Synchronous ODT Mode
- Asynchronous ODT Mode
- Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)
Electrical Characteristics – 1.35V I
DD
Specifications
Table 19: I
DD
Maximum Limits
Speed Bin
DDR3L
-1600
DDR3L
-1866
DDR3L
-2133
Units Notes
Parameter Symbol Width
Operating current 0: One bank ACTI-
VATE-to-PRECHARGE
I
DD0
All 67 69 TBD mA 1, 2
Operating current 1: One bank ACTI-
VATE-to-READ-to-PRECHARGE
I
DD1
x4,x8 78 81 TBD mA 1, 2
x16 88 91 TBD mA 1, 2
Precharge power-down current: Slow
exit
I
DD2P0
All 11 11 TBD mA 1, 2
Precharge power-down current: Fast
exit
I
DD2P1
All 14 16 TBD mA 1, 2
Precharge quiet standby current I
DD2Q
All 34 36 TBD mA 1, 2
Precharge standby current I
DD2N
All 36 38 TBD mA 1, 2
Precharge standby ODT current I
DD2NT
All 40 42 TBD mA 1, 2
Active power-down current I
DD3P
All 36 38 TBD mA 1, 2
Active standby current I
DD3N
All 51 53 TBD mA 1, 2
Burst read operating current I
DD4R
x4,x8 125 135 TBD mA 1, 2
x16 185 195 TBD mA 1, 2
Burst write operating current I
DD4W
x4,x8 125 135 TBD mA 1, 2
x16 185 195 TBD mA 1, 2
Burst refresh current I
DD5B
All 245 250 TBD mA 1, 2
Room temperature self refresh I
DD6
All 24 24 TBD mA 1, 2, 3
Extended temperature self refresh I
DD6ET
All 34 34 TBD mA 2, 4
All banks interleaved read current I
DD7
x4,x8 190 200 TBD mA 1, 2
x16 220 230 TBD mA 1, 2
Reset current I
DD8
All I
DD2P
+ 2mA I
DD2P
+ 2mA I
DD2P
+ 2mA mA 1, 2
Notes:
1. T
C
= 85°C; SRT and ASR are disabled.
2. Enabling ASR could increase I
DDx
by up to an additional 2mA.
3. Restricted to T
C
(MAX) = 85°C.
4. T
C
= 85°C; ASR and ODT are disabled; SRT is enabled.
5. The I
DD
values must be derated (increased) on IT-option devices when operated outside
of the range 0°C ≤ T
C
≤ +85°C:
5a. When T
C
< 0°C: I
DD2P0
, I
DD2P1
and I
DD3P
must be derated by 4%; I
DD4R
and I
DD4W
must
be derated by 2%; and I
DD6
, I
DD6ET
and I
DD7
must be derated by 7%.
5b. When T
C
> 85°C: I
DD0
, I
DD1
, I
DD2N
, I
DD2NT
, I
DD2Q
, I
DD3N
, I
DD3P
, I
DD4R
, I
DD4W
, and I
DD5B
must be derated by 2%; I
DD2Px
must be derated by 30%.
8Gb: x4, x8, x16 DDR3L SDRAM
Electrical Characteristics – 1.35V I
DD
Specifications
38
Rev.2.0 June 2016
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