Datasheet
Table Of Contents
- DDR3L SDRAM
- Description
- State Diagram
- Functional Description
- Functional Block Diagrams
- Ball Assignments and Descriptions
- Package Dimensions
- Electrical Specifications
- Thermal Characteristics
- Electrical Specifications – I DD Specifications and Conditions
- Electrical Characteristics – 1.35V IDD Specifications
- Electrical Specifications – DC and AC
- ODT Characteristics
- Output Driver Impedance
- Output Characteristics and Operating Conditions
- Speed Bin Tables
- Electrical Characteristics and AC Operating Conditions
- Electrical Characteristics and AC Operating Conditions
- Command and Address Setup, Hold, and Derating
- Data Setup, Hold, and Derating
- Commands – Truth Tables
- Commands
- Input Clock Frequency Change
- Write Leveling
- Initialization
- Voltage Initialization / Change
- Mode Registers
- Mode Register 0 (MR0)
- Mode Register 1 (MR1)
- Mode Register 2 (MR2)
- Mode Register 3 (MR3)
- MODE REGISTER SET (MRS) Command
- ZQ CALIBRATION Operation
- ACTIVATE Operation
- READ Operation
- WRITE Operation
- PRECHARGE Operation
- SELF REFRESH Operation
- Extended Temperature Usage
- Power-Down Mode
- RESET Operation
- On-Die Termination (ODT)
- Dynamic ODT
- Synchronous ODT Mode
- Asynchronous ODT Mode
- Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

Asynchronous ODT Mode
Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when
either R
TT,nom
or R
TT(WR)
is enabled; however, the DLL is temporarily turned off in pre-
charged power-down standby (via MR0[12]). Additionally, ODT operates asynchronous-
ly when the DLL is synchronizing after being reset. See Power-Down Mode (page 177)
for definition and guidance over power-down details.
In asynchronous ODT timing mode, the internal ODT command is not delayed by AL
relative to the external ODT command. In asynchronous ODT mode, ODT controls R
TT
by analog time. The timing parameters
t
AONPD and
t
AOFPD replace ODTLon/
t
AON
and ODTLoff/
t
AOF, respectively, when ODT operates asynchronously.
The minimum R
TT
turn-on time (
t
AONPD [MIN]) is the point at which the device termi-
nation circuit leaves High-Z and ODT resistance begins to turn on. Maximum R
TT
turn-
on time (
t
AONPD [MAX]) is the point at which ODT resistance is fully on.
t
AONPD
(MIN) and
t
AONPD (MAX) are measured from ODT being sampled HIGH.
The minimum R
TT
turn-off time (
t
AOFPD [MIN]) is the point at which the device termi-
nation circuit starts to turn off ODT resistance. Maximum R
TT
turn-off time (
t
AOFPD
[MAX]) is the point at which ODT has reached High-Z.
t
AOFPD (MIN) and
t
AOFPD
(MAX) are measured from ODT being sampled LOW.
8Gb: x4, x8, x16 DDR3L SDRAM
Asynchronous ODT Mode
200
Rev.2.0 June 2016
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