Datasheet
Table Of Contents
- DDR3L SDRAM
- Description
- State Diagram
- Functional Description
- Functional Block Diagrams
- Ball Assignments and Descriptions
- Package Dimensions
- Electrical Specifications
- Thermal Characteristics
- Electrical Specifications – I DD Specifications and Conditions
- Electrical Characteristics – 1.35V IDD Specifications
- Electrical Specifications – DC and AC
- ODT Characteristics
- Output Driver Impedance
- Output Characteristics and Operating Conditions
- Speed Bin Tables
- Electrical Characteristics and AC Operating Conditions
- Electrical Characteristics and AC Operating Conditions
- Command and Address Setup, Hold, and Derating
- Data Setup, Hold, and Derating
- Commands – Truth Tables
- Commands
- Input Clock Frequency Change
- Write Leveling
- Initialization
- Voltage Initialization / Change
- Mode Registers
- Mode Register 0 (MR0)
- Mode Register 1 (MR1)
- Mode Register 2 (MR2)
- Mode Register 3 (MR3)
- MODE REGISTER SET (MRS) Command
- ZQ CALIBRATION Operation
- ACTIVATE Operation
- READ Operation
- WRITE Operation
- PRECHARGE Operation
- SELF REFRESH Operation
- Extended Temperature Usage
- Power-Down Mode
- RESET Operation
- On-Die Termination (ODT)
- Dynamic ODT
- Synchronous ODT Mode
- Asynchronous ODT Mode
- Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

Figure 75: Data Output Timing –
t
DQSQ and Data Valid Window
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10
Bank,
Col n
t
RPST
NOPREAD NOPNOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
1
Address
2
t
DQSQ (MAX)
DQS, DQS#
DQ
3
(last data valid)
DQ
3
(first data no longer valid)
All DQ collectively
DO
n
DO
n + 3
DO
n + 2
DO
n + 1
DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4
DO
n + 2
DO
n + 1
DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4
DO
n + 3
DO
n + 2
DO
n + 1
DO
n
DO
n + 7
DO
n + 6
DO
n + 5
DO
n
DO
n + 3
t
RPRE
Don’t Care
Data valid Data valid
t
QH
t
QH
t
HZ
DQ (MAX)
DO
n + 4
RL = AL + CL
t
DQSQ (MAX)
t
LZ
DQ (MIN)
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at
T0.
3. DO n = data-out from column n.
4. BL8, RL = 5 (AL = 0, CL = 5).
5. Output timings are referenced to V
DDQ
/2 and DLL on and locked.
6.
t
DQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK.
7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within
a burst.
8Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
160
Rev 2.0 June 2016
© 2015 Alliance Memory, Inc. All rights reserved.
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