Datasheet
Table Of Contents
- DDR3L SDRAM
- Description
- State Diagram
- Functional Description
- Functional Block Diagrams
- Ball Assignments and Descriptions
- Package Dimensions
- Electrical Specifications
- Thermal Characteristics
- Electrical Specifications – I DD Specifications and Conditions
- Electrical Characteristics – 1.35V IDD Specifications
- Electrical Specifications – DC and AC
- ODT Characteristics
- Output Driver Impedance
- Output Characteristics and Operating Conditions
- Speed Bin Tables
- Electrical Characteristics and AC Operating Conditions
- Electrical Characteristics and AC Operating Conditions
- Command and Address Setup, Hold, and Derating
- Data Setup, Hold, and Derating
- Commands – Truth Tables
- Commands
- Input Clock Frequency Change
- Write Leveling
- Initialization
- Voltage Initialization / Change
- Mode Registers
- Mode Register 0 (MR0)
- Mode Register 1 (MR1)
- Mode Register 2 (MR2)
- Mode Register 3 (MR3)
- MODE REGISTER SET (MRS) Command
- ZQ CALIBRATION Operation
- ACTIVATE Operation
- READ Operation
- WRITE Operation
- PRECHARGE Operation
- SELF REFRESH Operation
- Extended Temperature Usage
- Power-Down Mode
- RESET Operation
- On-Die Termination (ODT)
- Dynamic ODT
- Synchronous ODT Mode
- Asynchronous ODT Mode
- Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)

Figure 66: Consecutive READ Bursts (BL8)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11
Don’t CareTransitioning Data
T12 T13 T14
t
RPST
NOPREAD READNOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
Bank,
Col n
Bank,
Col b
Address
2
RL = 5
t
RPRE
t
CCD
RL = 5
DO
n + 3
DO
n + 2
DO
n + 1
DO
n
DO
n + 7
DO
n + 6
DO
n + 5
DO
n + 4
DO
b + 3
DO
b + 2
DO
b + 1
DO
b
DO
b + 7
DO
b + 6
DO
b + 5
DO
b + 4
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BL8, RL = 5 (CL = 5, AL = 0).
Figure 67: Consecutive READ Bursts (BC4)
NOP
CK
CK#
Command
1
DQ
3
DQS, DQS#
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Address
2
T10 T11
Don’t CareTransitioning Data
T12 T13 T14
READ READNOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP
Bank,
Col n
Bank,
Col b
t
RPST
t
RPRE
t
RPST
t
RPRE
RL = 5
DO
n + 3
DO
n + 2
DO
n + 1
DO
n
DO
b + 3
DO
b + 2
DO
b + 1
DO
b
RL = 5
t
CCD
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0
and T4.
3. DO n (or b) = data-out from column n (or column b).
4. BC4, RL = 5 (CL = 5, AL = 0).
8Gb: x4, x8, x16 DDR3L SDRAM
READ Operation
155
Rev 2.0 June 2016
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