Datasheet

Table 6. Absolute Maximum Rating
Symbol
Item
Values
Unit
Note
V
IN
, V
OUT
Input, Output Voltage
-1.0 ~ 4.6
V
V
DD
, V
DDQ
Power Supply Voltage
-1.0 ~ 4.6
V
T
A
Ambient Temperature
Commercial
0 ~ 70
°C
Industrial
-40 ~ 85
°C
T
STG
Storage Temperature
-55 ~ 150
°C
P
D
Power Dissipation
1.1
W
I
OS
Short Circuit Output Current
50
mA
Note: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Table 7. Recommended D.C. Operating Conditions
(V
DD
= 3.3V
±
0.3V, T
A
= -40~85°C)
Symbol
Parameter/ Condition
Min.
Typ.
Max.
Unit
Note
V
DD
DRAM Core Supply Voltage
3.0
3.3
3.6
V
2
V
DDQ
I/O Supply Voltage
3.0
3.3
3.6
V
2
V
IH
Input High Level Voltage
2
-
V
DDQ
+0.3
V
2
V
IL
Input Low Level Voltage
-0.3
-
0.8
V
2
I
IL
Input Leakage Current
( 0V
≦
VIN
≦
VDD, All other pins not under test = 0V )
-10
-
10
µA
I
OZ
Output Leakage Current
(Output Disable, 0V
≦
VIN
≦
VDDQ )
-10
-
10
µA
V
OH
Output High Level Voltage ( I
OUT
= -2mA )
2.4
-
-
V
V
OL
Output Low Level Voltage ( I
OUT
= 2mA )
-
-
0.4
V
Table 8. Capacitance
(V
DD
= 3.3V, f = 1MHz, T
A
= 25°C)
Symbol
Parameter
Min.
Max.
Unit
C
I
Input Capacitance
3.5
5.5
pF
C
I/O
Input/Output Capacitance
5.5
7.5
pF
Note: These parameters are periodically sampled and are not 100% tested.
AS4C4M32SA-6TIN
AS4C4M32SA-6TCN
AS4C4M32SA-7TCN
Confidential
-18/47-
Rev.1.0 Sep.2015