Datasheet

8. ELECTRICAL CHARACTERISTIC
8.1 Absolute Maximum Ratings
PARAMETER SYMBOL
VALUES
UNITS
MIN MAX
Voltage on VDD relative to VSS VDD 0.3 2.7 V
Voltage on VDDQ relative to VSS VDDQ 0.3 2.7 V
Voltage on any pin relative to VSS VIN, VOUT 0.3 2.7 V
Operating temperature : Tj
-30 +85
°C
Storage Temperature TSTG 55
+150
°C
Short Circuit Output Current IOUT ±50 mA
Power Dissipation PD 1.0 W
8.2 Input/Output Capacitance
[Notes 1-3]
PARAMETER SYMBOL MIN MAX UNITS NOTES
Input capacitance, CK,
CK
CCK 1.5 3.0 pF
Input capacitance delta, CK,
CK
CDCK 0.25 pF
Input capacitance, all other input-only pins CI 1.5 3.0 pF
Input capacitance delta, all other input-only pins CDI 0.5 pF
7Input/ output capacitance, DQ,DM,DQS CIO 3.0 5.0 pF 4
Input/output capacitance delta, DQ, DM, DQS CDIO 0.50 pF 4
Notes:
1. These values are guaranteed by design and are tested on a sample base only.
2. These capacitance values are for single monolithic devices only. Multiple die packages will have parallel capacitive loads.
3. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is
required to match signal propagation times of DQ, DQS and DM in the system.
AS4C32M16MD1A-5BCN
Confidential
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Rev.1.2 July 2016