Datasheet

Figure 25.1. Burst write operation: RL=5 (AL=2, CL=3), WL=4, BL=4
CK#
CK
t
DQSS
CMD
Case 1: with t
DQSS (max)
>=t
WR
T0 T1 T2 T3 T4 T5 T6 T7
Tn
Posted CAS#
WRITE A
NOP NOP NOP NOP NOP NOP NOP
Precharge
t
DSS
t
DQSS
t
DSS
Completion of the
Burst Write
WL = RL-1 =4
DNA
0
DNA
1
DNA
2
DNA
3
DQS
DQS#
>=t
WR
WL = RL-1 =4
DNA
0
DNA
1
DNA
2
DNA
3
DQS
DQS#
t
DQSS
t
DSH
t
DQSS
t
DSH
Case 2: with t
DQSS (min)
DQs
DQs
Figure 25.2. Burst write operation: RL=3 (AL=0, CL=3), WL=2, BL=4
CK#
CK
<=t
DQSS
CMD
>=t
WR
T0 T1 T2 T3 T4 T5 Tm Tm+1
Tn
WRITE A NOP NOP NOP NOP NOP
Precharge
NOP
Bank A
Activate
Completion of the
Burst Write
WL = RL-1 =2
DNA
0
DNA
1
DNA
2
DNA
3
DQS
DQS#
DQs
>=t
RP
AS4C32M16D2A-25BIN
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070 TEL: [phone] FAX: [phone]
Alliance Memory Inc. reserves the right to change products or specification without notice
Rev.1.2
44
Jun./2014