Datasheet
Table 69. Absolute Maximum DC Ratings
Symbol
Parameter
Values
Unit
Note
V
DD
Voltage on V
DD
pin relative to V
SS
-0.3 ~ 1.5
V
1,3
V
DDQ
Voltage on V
DDQ
pin relative to V
SS
-0.3 ~ 1.5
V
1,3
V
PP
Voltage on V
PP
pin relative to V
SS
-0.3 ~ 3.0
V
4
V
IN
, V
OUT
Voltage on any pin except V
REFCA
relative to V
SS
-0.3 ~ 1.5
V
1,3,5
T
STG
Storage Temperature
-55 ~ 100
°
C
1,2
Note 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Note 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
Note 3. V
DD
and V
DDQ
must be within 300 mV of each other at all times; and V
REFCA
must be not greater than 0.6 x V
DDQ
,
When V
DD
and V
DDQ
are less than 500 mV; V
REFCA
may be equal to or less than 300 mV.
Note 4. V
PP
must be equal or greater than V
DD
/V
DDQ
at all times.
Note 5. Refer to overshoot area above 1.5 V.
Table 70. Temperature Range
Symbol
Parameter
Values
Unit
Note
T
OPER
Commercial Operating Temperature Range
0 ~ 95
°
C
1,2
Industrial Operating Temperature Range
-40 ~ 95
°
C
1,2
Note 1. Operating temperature is the case surface temperature on center/top of the DRAM.
Note 2. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C
case temperature. Full specifications are guaranteed in this range, but the following additional apply.
a. Refresh commands must be doubled in frequency, therefore, reducing the Refresh interval tREFI to 3.9us. It is
also possible to specify a component with 1x refresh (tREFI to 7.8us) in the Extended Temperature Range.
Table 71. Recommended DC Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
Note
V
DD
Supply Voltage
1.14
1.2
1.26
V
1,2,3
V
DDQ
Supply Voltage for Output
1.14
1.2
1.26
V
1,2,3
V
PP
DRAM Activating Power Supply
2.375
2.5
2.75
V
3
Note 1. Under all conditions V
DDQ
must be less than or equal to V
DD
.
Note 2. V
DDQ
tracks with V
DD
. AC parameters are measured with V
DD
and V
DDQ
tied together.
Note 3. DC bandwidth is limited to 20MHz.
AS4C256M16D4
Confidential
- 159 of 201 -
Rev.1.0 Aug.2019