Datasheet

Power-down entry to exit time t
PD
t
CKE
(min)
9*t
REFI
15
Exit precharge power-down with
DLL frozen to commands requiring
a locked DLL
t
XPDLL
24
-
ns
2
10
-
nCK
2
Exit power-down with DLL on to any
valid command; Exit precharge
power-down with DLL frozen to
commands not requiring a locked DLL
t
XP
6
-
ns
3
-
nCK
Command pass disable delay t
CPDED
1
-
nCK
Timing of ACT command to
Power-down entry
t
ACTPDEN
1
-
nCK
20
Timing of PRE command to
Power-down entry
t
PRPDEN
1
-
nCK
20
Timing of RD/RDA command to
Power-down entry
t
RDPDEN
RL+4+1
-
nCK
Timing of WR command to Power-down
entry (BL8OTF, BL8MRS, BL4OTF)
t
WRPDEN
(min)
WL + 4 + [tWR/tCK(avg)] nCK
9
Timing of WR command to Power-down
entry (BC4MRS)
t
WRPDEN
(min)
WL + 2 + [tWR/tCK(avg)] nCK
9
Timing of WRA command to Power-down
entry (BL8OTF, BL8MRS, BL4OTF)
t
WRAPDEN
WL+4
+WR+1
-
nCK
10
Timing of WRA command to Power-down
entry (BC4MRS)
t
WRAPDEN
WL+2
+WR+1
-
nCK
10
Timing of REF command to Power-down
entry
t
REFPDEN
1
-
nCK
20,21
Timing of MRS command to Power-down
entry
t
MRSPDEN
t
MOD
(min)
-
RTT turn-on t
AON
-225
225
ps
7
Asynchronous RTT turn-on delay
(Power-down with DLL frozen)
t
AONPD
2
8.5
ns
RTT_Nom and RTT_WR turn-off time
from ODTL
off reference
t
AOF
0.3
0.7
t
CK
(avg)
8
Asynchronous RTT turn-off delay
(Power-down with DLL frozen)
t
AOFPD
2
8.5
ns
ODT high time without write command
or
with write command and BC4
ODTH4
4
-
nCK
ODT high time with Write command
and BL8
ODTH8
6
-
nCK
RTT dynamic change skew t
ADC
0.3
0.7
t
CK
(avg)
Power-up and reset calibration time t
ZQinit
512
-
nCK
Normal operation full calibratio
n time t
ZQoper
256
-
nCK
Normal operation short cali
bration time t
ZQCS
64
-
nCK
23
First DQS pulse rising edge after write
leveling mode is programmed
t
WLMRD
40
-
nCK
3
Parameter Symbol
- 12 (DDR3-1600)
Unit NoteMin
Max
Confidential
- 36/41 -
Rev.1.1 April 2017
AS4C256M16D3B-12BIN
AS4C256M16D3B-12BCN