Datasheet

AS4C16M32MD1
Confidential 47 Rev. 1.0/July 2014
8. ELECTRICAL CHARACTERISTIC
8.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
VALUES
UNITS
MIN
MAX
Voltage on VDD relative to VSS
VDD
−0.3
2.7
V
Voltage on VDDQ relative to VSS
VDDQ
−0.3
2.7
V
Voltage on any pin relative to VSS
VIN, VOUT
−0.3
2.7
V
Operating temperature :
Tj
-25
85
°C
-40
85
Storage Temperature
TSTG
−55
150
°C
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.0
W
8.2 Input/Output Capacitance
[Notes 1-3]
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Input capacitance, CK, CK
CCK
1.5
3.0
pF
Input capacitance delta, CK, CK
CDCK
0.25
pF
Input capacitance, all other input-only pins
CI
1.5
3.0
pF
Input capacitance delta, all other input-only pins
CDI
0.5
pF
7Input/ output capacitance, DQ,DM,DQS
CIO
3.0
5.0
pF
4
Input/output capacitance delta, DQ, DM, DQS
CDIO
0.50
pF
4
Notes:
1. These values are guaranteed by design and are tested on a sample base only.
2. These capacitance values are for single monolithic devices only. Multiple die packages will have parallel capacitive loads.
3. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This
is required to match signal propagation times of DQ, DQS and DM in the system.