Datasheet

8.5 AC Timings
[Recommended Operating Conditions: Notes 1-9]
PARAMETER SYMBOL
- 5
- 6
- 75
UNIT NOTES
MIN
MAX
MIN
MAX
MIN
MAX
DQ output access time
from CK/ CK
CL=3
tAC
2.0
5.0
2.0
5.0
2.0
6.0
ns
CL=2
2.0
6.5
2.0
6.5
2.0
6.5
DQS output access time from
CK/
CK
CL=3
tDQSCK
2.0
5.0
2.0
5.0
2.0
6.0
ns
CL=2
2.0
6.5
2.0
6.5
2.0
6.5
Clock high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock half period tHP
Min
(tCL, tCH)
Min
(tCL, tCH)
Min
(tCL, tCH)
ns 10,11
Clock cycle time
CL=3
tCK
5
6
7.5
ns
12
CL=2
12
12
12
ns
12
DQ and DM input setup
time
fast slew rate
tDS
0.48
0.6
0.8
ns
13,14,15
slow slew rate
0.58
0.7
0.9
ns
13,14,16
DQ and DM input hold time
fast slew rate
tDH
0.48
0.6
0.8
ns
13,14,15
slow slew rate
0.58
0.7
0.9
ns
13,14,16
DQ and DM input pulse width
tDIPW
1.6
1.6
1.8
ns
17
Address and control input
setup time
fast slew rate
tIS
0.9
1.1
1.3
ns
15,18
slow slew rate
1.1
1.3
1.5
ns
16,18
Address and control input
hold time
fast slew rate
tIH
0.9
1.1
1.3
ns
15,18
slow slew rate
1.1
1.3
1.5
ns
16,18
Address and control input pulse width
tIPW
2.3
2.6
2.6
ns
17
DQ & DQS low-impedance time from CK/
CK
tLZ 1.0 1.0 1.0 ns 19
DQ & DQS high-impedance
time from CK/
CK
CL=3
tHZ
5.0
5.0
6.0
ns 19
CL=2
6.5
6.5
6.5
DQS-DQ skew
tDQSQ
0.4
0.5
0.6
ns
20
DQ/DQS output hold time from DQS
tQH
tHP-tQHS
tHP-tQHS
tHP-tQHS
ns
11
Data hold skew factor
tQHS
0.5
0.65
0.75
ns
11
Write command to 1st DQS latching
transition
tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS input high-level width
tDQSH
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQS input low-level width
tDQSL
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQS falling edge to CK setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge hold time from CK
tDSH
0.2
0.2
0.2
tCK
MODE REGISTER SET command period
tMRD
2
2
2
tCK
Write preamble setup time
tWPRES
0
0
0
ns
21
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
22
Write preamble
tWPRE
0.25
0.25
0.25
tCK
Read preamble
CL = 3
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
23
CL = 2
0.5
1.1
0.5
1.1
0.5
1.1
tCK
23
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
ACTIVE to PRECHARGE command period
tRAS
40
70,000
42
70,000
45
70,000
ns
ACTIVE to ACTIVE command period tRC
tRAS+
tRP
tRAS+
tRP
tRAS+
tRP
ns
AUTO REFRESH to ACTIVE/AUTO
REFRESH command period
tRFC 72 72 72 ns
ACTIVE to READ or WRITE delay
tRCD
15
18
22.5
ns
AS4C16M16MD1
256Mb MOBILE DDR SDRAM
Confidential
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Ver.1.1 Oct.2015