Datasheet

Notes:
1.
IDD specifications are tested after the device is properly initialized.
2.
Input slew rate is 1V/ns.
3.
Definitions for IDD:
LOW is defined as V
IN ≤ 0.1 * V DDQ ;
HIGH is defined as V
IN ≥ 0.9 * V DDQ ;
STABLE is defined as inputs sta
ble at a HIGH or LOW level;
SWITCHING is defined as:
-
Address and command: inputs changing between HIGH and LOW once per two clock cycles;
-
Data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
4.
IDD8 is a typical value at 25 ℃.
IDD6 Conditions :
IDD6 Normal Power Units
TCSR Range
45
℃
85
℃
uA
Full Array
250
400
1/2 Array
200
300
1/4 Array
180
250
1/8 Array
150
230
1/16 Array
130
220
Notes:
1.
Measured with outputs open.
2.
Internal TCSR can be supported.
AS4C16M16MD1
256Mb MOBILE DDR SDRAM
Confidential
- 47/56 -
Ver.1.1 Oct.2015