Datasheet

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Table 27.
Electrical Characteristics and Recommended A.C. Operating Conditions
(V
DD
= 1.8V ± 0.1V, T
OPER
= -40~95 °C)
Symbol Parameter
-25
Unit
Specific
Notes
Min. Max.
t
CK(avg)
Average clock period
CL=3
5 8
ns
15, 33, 34
CL=4
3.75 8
ns
15, 33, 34
CL=5
2.5 8
ns
15, 33, 34
CL=6
2.5 8
ns
15, 33, 34
CL=7
- -
ns
15, 33, 34
t
CH(avg)
Average clock HIGH pulse width
0.48 0.52
t
CK
34, 35
t
CL(avg)
Average Clock LOW pulse width
0.48 0.52
t
CK
34, 35
WL
Write command to DQS associated clock edge
RL-1
t
CK
t
DQSS
DQS latching rising transitions to associated
clock edges
-0.25 0.25
t
CK
28
t
DSS
DQS falling edge to CK setup time
0.2 -
t
CK
28
t
DSH
DQS falling edge hold time from CK
0.2 -
t
CK
t
DQSH
DQS input HIGH pulse width
0.35 -
t
CK
t
DQSL
DQS input LOW pulse width
0.35 -
t
CK
t
WPRE
Write preamble
0.35 -
t
CK
t
WPST
Write postamble
0.4 0.6
t
CK
10
t
IS(base)
Address and Control input setup time
0.175 -
ns
5, 7, 9, 22,
27
t
IH(base)
Address and Control input hold time
0.25 -
ns
5, 7, 9, 23,
27
t
IPW
Control & Address input pulse width for each
input
0.6 -
t
CK
t
DS(base)
DQ & DM input setup time
0.05 -
ns
6-8, 20, 26,
29
t
DH(base)
DQ & DM input hold time
0.125 -
ns
6-8, 21, 26,
29
t
DIPW
DQ and DM input pulse width for each input
0.35 -
t
CK
t
AC
DQ output access time from CK, CK#
-0.4 0.4
ns
38
t
DQSCK
DQS output access time from CK, CK#
-0.35 0.35
ns
38
t
HZ
Data-out high-impedance time from CK, CK#
- t
AC(max)
ns
18, 38
t
LZ(DQS)
DQS(DQS#) low-impedance time from CK,
CK#
t
AC(min)
t
AC(max)
ns
18, 38
t
LZ(DQ)
DQ low-impedance time from CK, CK#
2t
AC(min)
t
AC(max)
ns
18, 38
t
DQSQ
DQS-DQ skew for DQS and associated DQ
signals
- 0.2
ns
13
t
HP
CK half pulse width
min(
t
CH,
t
CL)
-
ns
11, 12, 35
t
QHS
DQ hold skew factor
- 0.3
ns
12, 36
t
QH
DQ/DQS output hold time from DQS
t
HP-
t
QHS
- ns
37
t
RPRE
Read preamble
0.9 1.1
t
CK
19, 39
t
RPST
Read postamble
0.4 0.6
t
CK
19, 40
t
RRD
Active to active command period
7.5 -
ns
4, 30
t
FAW
Four Activate Window
35 -
ns
4, 30
t
CCD
CAS# to CAS# command delay
2 -
t
CK
t
WR
Write recovery time
15 -
ns
30
t
DAL
Auto Power write recovery + precharge time
WR + t
RP
- ns
14, 31
t
WTR
Internal Write to Read Command Delay
7.5 -
ns
3, 24, 30
t
RTP
Internal read to precharge command delay
7.5 -
ns
3, 30
t
CKE
CKE minimum pulse width
3 -
t
CK
25
AS4C128M16D2A-25BCN
AS4C128M16D2A-25BIN
Confidential
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Rev.1.0 Dec 2015