Specifications

9
安捷倫科技高頻元件量測研討會
2/23/2006
Page 17
Chip capacitance
Open
waveform
bare substrate
2202 T4
failure
good unit 2
good unit 1
Analysis Case III ÆFA Application
▼
▼
TDR of bare, good, and failure sample
TDR of bare, good, and failure sample
Slight difference on the
chip capacitance charge
curve –
A possible reason of
this phenomenon is the
IMC makes the interface
resistance between wire
and bond pad growing,
which causes the
charge current different.
IMC
安捷倫科技高頻元件量測研討會
2/23/2006
Page 18
Analysis Case IV :
ÆBall pad effect analysis
Ball_Pad1
Ball_Pad3
Ball_Pad2
2 4 6 8 10 12 14 16 18020
-20
-15
-10
-5
-25
0
freq, GHz
dB(Ball_Pad1_UP_1112..S(2,1 dB(Ball_Pad2_UP_1112..S(2,1 dB(Ball_Pad3_UP_1112..S(2,1
Measurement Result
Measurement Result
Void PWR/GNG plane above
the ball land on Layer3
No Void
Void layer3
Void layer2＆3
Void the plane above
ball pad area at
PWR/GND will reduce
the capacitance,