Technical data

Module 13
SPGU Control and Applications
13-25
Gate
Drain
Source
Sub
SPGU
SPGU output
NOR Cell Test
Pulse switch for drain open
3-level pulse by each channel
40V
-40V
Write pulse
Erase pulse
• Drain open can be made by
opening the analog switch in
the HVSPGU.
Flash Memory – Endurance Test
Gate
Drain
Source
Sub
12V
7V
12V
Write pulses
Erase pulse
Open
NAND Cell Test
• Burst write/erase reduces
test time dramatically
In an example, the test time was less
than 2 hours for 1 million cycle test.
It will be about 1/70 compared with
4155/4156 solution.
For 1 million cycle test, 2PG solution
improves the test time about 1/4
compared with 4155/4156 solution.
3PG solution improves it about 1/4
compared with 2PG solution.
Note: