Technical data

Module 13
SPGU Control and Applications
13-17
p
n+
n+
Source
Drain
Gate
Substrate
Icp
SMU
SMU
PGU
or
Oxide
A
A
Charge Pumping
Charge pumping is a type of hot carrier measurement. It provides direct measurement of interface
states and an indication of electron and hole trapping.
The gate of the MOS transistor is connected to a pulse generator. The current (Icp) is caused by the
repetitive recombination of minority carriers with majority carriers at the silicon-silicon oxide
interface.