Specifications

5-7. High-frequency impedance measurement using the probe
As shown in Table 5-3, an RF I-V instrument can be used for a wafer’s L, C, and R measurements,
which are measurements in RF frequencies. Figure 5-28 shows an example measurement configura-
tion when using the RF I-V instrument. This figure illustrates a measurement system configuration
for using the E4991A RF impedance/material analyzer with a probe. Option E4991A-010, the probe
station connection kit, makes it easier to establish a probing system that can perform on-wafer mea-
surements from 1 MHz to 3 GHz. This kit contains a small test head and an extension cable.
The E4991A has calibration, compensation, and DC bias functions, and compared to a network ana-
lyzer, the E4991A provides a wider impedance measurement range and stable measurement perfor-
mance (refer to section 2-6).
Table 5-3. Application examples of high-frequency impedance measurements using probe
5-18
Application Parameters DUT Frequency Measurement requirement
Spiral inductor L, Q RFIC for mobile GHz - Low inductance (nH range)
phone - High Q
Transistor, Diode C, D CMOS FET Pin diode MHz/GHz - Low inductance (nH range)
Transistor/diode - Low capacitance (pF range)
for optical use
Disk head C, D GMR head, MHz/GHz - Low inductance
magnetic head
IC package C, L IC package GHz - Low inductance (nH range)
- Low capacitance (pF range)
Memory C, D FRAM, DRAM, SRAM MHz, GHz - Low capacitance (pF range)
Dielectric material C, D Thin film layer, MHz, GHz - Wide impedance range
PC board - Low-loss
Chip L, Q Chip inductor MHz, GHz - Stable contact to small
inductor/capacitor C, D Chip capacitor electrodes
- Wide impedance range
- High Q/Low D